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What is R6015FNX?

This electronic component, produced by the manufacturer "ROHM Semiconductor", performs the same function as "Drive Nch MOSFET".


R6015FNX Datasheet PDF - ROHM Semiconductor

Part Number R6015FNX
Description Drive Nch MOSFET
Manufacturers ROHM Semiconductor 
Logo ROHM Semiconductor Logo 


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Data Sheet
10V Drive Nch MOSFET
R6015FNX
Structure
Silicon N-channel MOSFET
Features
1) Fast reverse recovery time (trr)
2) Low on-resistance.
3) Fast switching speed.
4) Gate-source voltage
  VGSS garanteed to be ±30V .
5) Drive circuits can be simple.
6) Parallel use is easy.
Dimensions (Unit : mm)
TO-220FM
10.0 φ3.2
4.5
2.8
1.2
1.3
0.8
2.54 2.54
(1) (2) (3)
0.75
2.6
Application
Switching
Inner circuit
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
R6015FNX
Bulk
-
500
www.DataSheet.co.kr
(1) Gate
(2) Drain
(3) Source
Absolute maximum ratings (Ta 25°C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche Current
Avalanche Energy
Power dissipation (Tc=25)
Channel temperature
Range of storage temperature
VDSS
VGSS
ID *3
600
30
15
IDP *1
60
IS *3
15
ISP *1
60
IAS *2
7.5
EAS *2
15
PD 50
Tch 150
Tstg 55 to 150
*1 Pw10s, Duty cycle1%
*2 L500H, VDD=50V, Rg=25, starting Tch=25°C
*3 Limited only by maximum temperature allowed.
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)
Limits
2.5
Unit
C / W
1
(1) (2) (3)
1 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/

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R6015FNX equivalent
R6015FNX
 
Data Sheet
Fig.13 Reverse Recovery Time vs. Source Current
1000
Ta=25°C
Vgs=0V
di/dt=100A/us
Pulsed
100
10
0
1 10
Source Current : IS [A]
100
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width
10
Ta=25°C
Single Pulse
1
0.1
0.01
0.001
0.0001
0.0001 0.001
Rth(ch-a)=42.6°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.01 0.1 1 10 100 1000
Pulse width : Pw (s)
Fig.14 Maximum Safe Operating Area
100
Operation in this area
is limited by RDS(on)
(VGS = 10V)
10
PW = 100μs
1 PW = 1ms
0.1
Ta=25°C
Single Pulse
0.01
0.1 1
10 100
Drain-Source Voltage : VDS [ V ]
PW = 10ms
1000
www.DataSheet.co.kr
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.08 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/


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Featured Datasheets

Part NumberDescriptionMFRS
R6015FNXThe function is Drive Nch MOSFET. ROHM SemiconductorROHM Semiconductor

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