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R6012ANJ fiches techniques PDF

ROHM Semiconductor - Drive Nch MOSFET

Numéro de référence R6012ANJ
Description Drive Nch MOSFET
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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R6012ANJ fiche technique
10V Drive Nch MOSFET
R6012ANJ
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
zApplications
Switching
zDimensions (Unit : mm)
LPTS
10.1
4.5 1.3
(1) Gate
(2) Drain
(3) Source
LPTL
1.24
2.54
5.08
0.78
(1) (2) (3)
0.4
2.7
Each lead has same dimensions
8.9
4.8
zPackaging specifications
Package
Taping
Type Code
LPTS
LPTL
TL
TLL
Basic ordering unit (pieces)
1000
www.DataSheet.co.kr
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-source voltage
VDSS
600
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
VGSS
ID
IDP
IS
ISP
3
1
3
1
±30
±12
±48
12
48
Avalanche Current
IAS 2
6
Avalanche Energy
EAS 2
9.6
Total power dissipation (Tc=25°C)
PD
100
Channel temperature
Tch 150
Range of storage temperature
Tstg
55 to +150
1 Pw10µs, Duty cycle1%
2 L 500µH, VDD=50V, RG=25, Starting, Tch=25°C
3 Limited only by maximum temperature allowed
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
zInner circuit
1
(1)
(1) Gate
(2) Drain
(3) Source
(2) (3)
1 Body Diode
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
1.25
Unit
°C/W
www.rohm.com
c 2009 ROHM Co., Ltd. All rights reserved.
1/5
2009.04 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/

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