DataSheetWiki


2SC3917 fiches techniques PDF

Sanyo Semicon Device - PNP/NPN Epitaxial Planar Silicon Transistors

Numéro de référence 2SC3917
Description PNP/NPN Epitaxial Planar Silicon Transistors
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





1 Page

No Preview Available !





2SC3917 fiche technique
Ordering number:EN2163A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1523/2SC3917
Switching Applications (with Bias Resistance)
Applications
· Switching circuits, inverter circuits, interface circuits,
driver circuits.
Features
· On-chip bias resistance : R1=4.7k, R2=4.7k.
· Small-sized package : SPA.
· Large current capacity : IC=500mA.
Package Dimensions
unit:mm
2033
[2SA1523/2SC3917]
( ) : 2SA1523
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
Conditions
ICBO
ICEO
IEBO
hFE
fT
VCB=(–)40V, IE=0
VCE=(–)40V, IB=0
VEB=(–)5V, IC=0
VCE=(–)5V, IC=(–)20mA
VCE=(–)10V, IC=(–)5mA
Output Capacitance
Cob VCB=(–)10V, f=1MHz
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Input OFF-State Voltage
Input ON-State Voltage
Input Resistance
Resistance Ratio
VCE(sat)
V(BR)CBO
V(BR)CEO
VI(off)
VI(on)
R1
IC=(–)40mA, IB=(–)2mA
IC=(–)10µA, IE=0
IC=(–)100µA, RBE=
VCE=(–)5V, IC=(–)100µA
VCE=(–)0.2V, IC=(–)20mA
R1/R2
B : Base
C : Collector
E : Emitter
SANYO : SPA
Ratings
(–)50
(–)50
(–)6
(–)500
(–)800
300
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Ratings
min typ
(–)410
50
(–)50
(–)50
(–)0.8
(–)1.0
3.3
0.9
(–)532
250
(200)
3.7
(5.5)
(–)0.1
(–)1.1
(–)1.9
4.7
1.0
max
(–)0.1
(–)0.5
(–)760
(–)0.3
(–)1.5
(–)4.0
6.1
1.1
Unit
µA
µA
µA
MHz
MHz
pF
pF
V
V
V
V
V
k
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71598HA (KT)/3317KI/D086TA, TS No.2163-1/2

PagesPages 2
Télécharger [ 2SC3917 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SC3912 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
Sanyo Semicon Device
2SC3913 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
Sanyo Semicon Device
2SC3914 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
Sanyo Semicon Device
2SC3915 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
Sanyo Semicon Device

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche