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PDF MBR850 Data sheet ( Hoja de datos )

Número de pieza MBR850
Descripción (MBR840 - MBR8200) Schottky Barrier Rectifier
Fabricantes SIYU　
Logotipo SIYU Logotipo



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No Preview Available ! MBR850 Hoja de datos, Descripción, Manual

SIYU R
肖特基二极管
反向电压 40---200V
正向电流 8.0 A
MBR840 ...... MBR8200
Schottky Barrier Rectifier
Reverse Voltage 40 to 200 V
Forward Current 8.0 A
Φ.138(3.5)
Φ.118(3.0)
TO-220AC
.420(10.67)
.380(9.65)
.189(4.8)
.138(3.5)
.054(1.4)
.045(1.14)
.270(6.86)
.230(5.84)
.625(15.88)
.560(14.22)
1
.028(0.7)
.019(0.5)
2
.138(3.5)
MAX
.025(0.65)
MAX
.500(12.70)
MIN
.115(2.92)
.080(2.03)
.109(2.79).109(2.79)
.090(2.29).090(2.29)
1
2
Unit：inch（mm）
特征 Features
·大电流承受能力。High Current Capability
·正向压降低。Low Forward Voltage Drop
· 低功耗高效率。Low Power Loss，High Efficiency
·引线和管体皆符合RoHS标准 。
Lead and body according with RoHS standard
机械数据 Mechanical Data
·封装: 塑料封装 Case: Molded Plastic
·极性: 标记模压或印于本体 Polarity: Symbols molded or marked on body
·安装位置: 任意 Mounting Position: Any
·安装扭距: 推荐值 0.3牛*米 Mounting torque：Recommend 0.3 N*m
极限值和温度特性 TA = 25℃ 除非另有规定。
Maximum Ratings & Thermal Characteristics Ratings at 25℃ ambient temperature unless otherwise specified.
符号 MBR MBR
Symbols 840 845
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
VRRM 40 45
最大均方根电压
Maximum RMS voltage
VRMS
28
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31.5
最大直流阻断电压
Maximum DC blocking voltage
VDC
40 45
最大正向平均整流电流
Maximum average forward rectified current
IF(AV)
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
IFSM
MBR
850
50
35
50
MBR MBR
860 880
60 80
42 56
60 80
8.0
150
MBR
8100
100
70
100
MBR
8150
150
105
150
MBR 单位
8200 Unit
200 V
140 V
200 V
A
A
典型热阻 Typical thermal resistance
工作结温和存储温度
Operating junction and storage temperature range
RθJC
Tj, TSTG
2.0
-55--- +150
℃/W
℃
电特性 TA = 25℃ 除非另有规定。
Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified.
符号 MBR MBR MBR MBR MBR MBR MBR MBR 单位
Symbols 840 845 850 860 880 8100 8150 8200 Unit
最大正向电压
Maximum forward voltage
IF = 8.0A
VF
0.70
0.80
0.85 0.95 0.99 V
最大反向电流
Maximum reverse current
典型结电容
Type junction capacitance
TA= 25℃
TA=100℃
VR = 4.0V, f = 1MHz
IR
Cj
0.5 mA
15
250 pF
大昌电子 DACHANG ELECTRONICS
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