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PDF 2SC3704 Data sheet ( Hoja de datos )

Número de pieza 2SC3704
Descripción Silicon NPN epitaxial planer type(For UHF band low-noise amplification)
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! 2SC3704 Hoja de datos, Descripción, Manual

Transistor
2SC3704
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
s Features
q Low noise figure NF.
q High gain.
q High transition frequency fT.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
15
10
2
80
200
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1:Bae
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol :2W
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
ICBO
IEBO
VCB = 15V, IE = 0
VEB = 1V, IC = 0
1 µA
1 µA
Forward current transfer ratio
hFE1
hFE2
VCE = 8V, IC = 20mA
VCE = 1V, IC = 3mA
50 150 300
80 280
Transition frequency
fT VCE = 8V, IC = 20mA, f = 0.8GHz
6 GHz
Collector output capacitance
Cob
VCE = 10V, IE = 0, f = 1MHz
0.7 1.2 pF
Noise figure
NF VCE = 8V, IC = 7mA, f = 800MHz
1.0 1.7 dB
Maximum unilateral power gain GUM
VCE = 8V, IC = 20mA, f = 800MHz
14
dB
Foward transfer gain
| S21e |2
VCE = 8V, IC = 20mA, f = 800MHz
13
dB
1

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