DataSheetWiki


2SC3675 fiches techniques PDF

Sanyo Semicon Device - 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications

Numéro de référence 2SC3675
Description 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





1 Page

No Preview Available !





2SC3675 fiche technique
Ordering number:EN1800E
NPN Triple Diffused Planar Silicon Transistor
2SC3675
900V/100mA High-Voltage Amplifier
High-Voltage Switching Applications
Applications
· High voltage amplifiers.
· High-voltage switching applications.
· Dynamic focus applications.
Features
· High breakdown voltage (VCEO min=900V).
· Small Cob (Cob typ=2.8pF).
· Wide ASO (Adoption of MBIT process).
· High reliability (Adoption of HVP process).
Package Dimensions
unit:mm
2010C
[2SC3675]
Specifications
JEDEC : TO-220AB
EIAJ : SC46
1 : Base
2 : Collector
3 : Emitter
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Cob
VCB=900V, IE=0
VEB=4V, IC=0
VCE=5V, IC=10mA
VCE=10V, IC=10mA
IC=20mA, IB=4mA
IC=20mA, IB=4mA
IC=1mA, IE=0
IC=1mA, RBE=
IE=1mA, IC=0
VCB=100V, f=1MHz
Ratings
1500
900
5
100
300
10
150
–55 to +150
Unit
V
V
V
mA
mA
W
˚C
˚C
Ratings
min typ
30
6
1500
900
5
2.8
max
10
10
5
2
Unit
µA
µA
MHz
V
V
V
V
V
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2098HA (KT)/80796TS (KOTO) 8-9202/4237AT/3195KI, TS No.1800–1/3

PagesPages 3
Télécharger [ 2SC3675 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SC3670 Silicon NPN Epitaxial Type TRANSISTOR Toshiba Semiconductor
Toshiba Semiconductor
2SC3671 Silicon NPN Epitaxial Type TRANSISTOR Toshiba Semiconductor
Toshiba Semiconductor
2SC3672 Silicon NPN Triple Diffused Type TRANSISTOR Toshiba Semiconductor
Toshiba Semiconductor
2SC3673 Silicon NPN Epitaxial Type TRANSISTOR Toshiba Semiconductor
Toshiba Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche