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2SC3668 fiches techniques PDF

Toshiba Semiconductor - Silicon NPN Epitaxial Type TRANSISTOR

Numéro de référence 2SC3668
Description Silicon NPN Epitaxial Type TRANSISTOR
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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2SC3668 fiche technique
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3668
Power Amplifier Applications
Power Switching Applications
2SC3668
Unit: mm
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
High collector power dissipation: PC = 1000 mW
High-speed switching: tstg = 1.0 μ (typ.)
Complementary to 2SA1428.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 50 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 2 A
Base current
IB
0.5 A
JEDEC
Collector power dissipation
Junction temperature
Storage temperature range
PC
1000
mW
Tj 150 °C
Tstg
55 to 150
°C
JEITA
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2009-12-21

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