|
|
PDF 2SC3663 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3663 | |
| Descripción | NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION | |
| Fabricantes | NEC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SC3663 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
DATA SHEET
SILICON TRANSISTOR
2SC3663
NPN EPITAXIAL SILICON TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
FEATURES
• Low-voltage, low-current, low-noise and high-gain
NF = 3.0 dB TYP.
@VCE = 1 V, IC = 250 PA, f = 1.0 GHz
GA = 3.5 dB TYP.
@VCE = 1 V, IC = 250 PA, f = 1.0 GHz
• Ideal for battery drive of pagers, compact radio equipment,
cordless phones, etc.
• Gold electrode gives high reliability.
• Mini mold package, ideal for hybrid ICs.
ABSOLUTE MAXIMUM RATINGS (TA = 25 qC)
PACKAGE DIMENSIONS (in mm)
2.8 ± 0.2
1.5
0.65+–00..115
B
EC
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
RATING
15
8
2
5
50
150
ð65 to +150
UNIT
V
V
V
mA
mW
qC
qC
ELECTRICAL CHARACTERISTICS (TA = 25 qC)
Marking
PIN CONNECTIONS
E: Emitter
B: Base
C: Collector
Marking: R62
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Maximum Available Gain
Noise Figure
Associated Power Gain
Collector Capacitance
SYMBOL
ICBO
IEBO
hFE
fT
°S21e°2
MAG
NF
GA
C Note
ob
TEST CONDITIONS
VCB = 5 V, IE = 0
VEB = 1 V, IC = 0
VCE = 1 V, IC = 250 PA, pulse
VCE = 1 V, IC = 1 mA
VCE = 1 V, IC = 1 mA, f = 1 GHz
VCE = 1 V, IC = 1 mA, f = 1 GHz
VCE = 1 V, IC = 250 PA, f = 1.0 GHz
VCE = 1 V, IC = 250 PA, f = 1.0 GHz
VCB = 1 V, IE = 0, f = 1.0 MHz
MIN.
50
4.0
TYP.
100
4
6.5
12.5
3.0
3.5
0.4
MAX.
0.1
0.1
250
4.5
0.6
UNIT
PA
PA
GHz
dB
dB
dB
dB
pF
Note Measured using 3-pin bridge, with emitter pin connected to the bridge guard pin.
Document No. P10406EJ1V0DS00 (1st edition)
Date Published August 1997 N
Printed in Japan
© 1997
1 page  
[MEMO]
2SC3663
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SC3663.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SC3661 | NPN Epitaxial Planar Silicon Transistor |  Sanyo Semicon Device |
| 2SC3661 | Transistor |  Kexin |
| 2SC3663 | NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION | NEC |
| 2SC3663 | Transistor | Kexin |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |