DataSheetWiki


2SB649A fiches techniques PDF

SeCoS - PNP Type Plastic Encapsulate Transistors

Numéro de référence 2SB649A
Description PNP Type Plastic Encapsulate Transistors
Fabricant SeCoS 
Logo SeCoS 





1 Page

No Preview Available !





2SB649A fiche technique
Elektronische Bauelemente
2SB649/2SB649A
PNP Type
Plastic Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-126C
FEATURES
8.0±0.2
3.2±0.2
2.0±0.2
Power smplifier applications
11.0±0.2
4.14±0.1
O2.8±0.1
O3.2±0.1
Power dissipation
1.4±0.1
12 3
PCM : 1 W Tamb=25
Collector current
ICM : - 1.5 A
Collector-base voltage
V(BR)CBO : -180 V
Collector-emitter voltage
15.3±0.2
1.27±0.1
0.76±0.1
4.55±0.1
2.28 Typ.
0.5± 0.1
VCEO
2SB649 : -120 V
2SB649A : -160 V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
1: Emitter
2: Collector
3: Base
Dimensions in Millimeters
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise
www.DataSheet.co.kr
Test
conditions
specified
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)CBO Ic=-1mA IE=0
V(BR)CEO Ic=-10mA IB=0
V(BR)EBO
ICBO
IEBO
IE=-1mA Ic=0
VCB=- 160 V, IE=0
VEB= -4V , IC =0
2SB649
2SB649A
-180
-120
-160
-5
DC current gain
hFE(1) *
2SB649
VCE= -5V, IC= -150 mA
2SB649A
hFE(2) * VCE=- 5V, IC = -500mA
60
60
30
MAX UNIT
V
V
V
-10 A
-10 A
320
200
Collector-emitter saturation voltage
VCE (sat) * IC =- 500 mA, IB=- 50mA
-1 V
Base-emitter voltage
VBE *
VCE=- 5V,IC=-150mA
-1.5 V
Transition frequency
fT VCE=-5V,, IC=- 150 mA
140 MHz
Collector output capacitance
Cob VCB=-10 V , IE=0,f=1MHz
27
pF
* The 2SB649 and 2SB649A are grouped by hFE1 as follows.
Rank
2SB649
2SB649A
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
B
60 - 120
60 - 120
C
100 - 200
100 - 200
D
160 - 320
----
Any changing of specification will not be informed individual
Page 1 of 2
Datasheet pdf - http://www.DataSheet4U.net/

PagesPages 2
Télécharger [ 2SB649A ]


Fiche technique recommandé

No Description détaillée Fabricant
2SB649 Silicon PNP Epitaxial Hitachi Semiconductor
Hitachi Semiconductor
2SB649 BIPOLAR POWER GENERAL PURPOSE TRANSISTOR Unisonic Technologies
Unisonic Technologies
2SB649 PNP Epitaxial Planar Transistors Weitron Technology
Weitron Technology
2SB649 TO-126C Plastic-Encapsulated Transistors TRANSYS Electronics
TRANSYS Electronics

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche