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Numéro de référence | 2SB649A | ||
Description | PNP Type Plastic Encapsulate Transistors | ||
Fabricant | SeCoS | ||
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1 Page
Elektronische Bauelemente
2SB649/2SB649A
PNP Type
Plastic Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
TO-126C
FEATURES
8.0±0.2
3.2±0.2
2.0±0.2
Power smplifier applications
11.0±0.2
4.14±0.1
O2.8±0.1
O3.2±0.1
Power dissipation
1.4±0.1
12 3
PCM : 1 W Tamb=25
Collector current
ICM : - 1.5 A
Collector-base voltage
V(BR)CBO : -180 V
Collector-emitter voltage
15.3±0.2
1.27±0.1
0.76±0.1
4.55±0.1
2.28 Typ.
0.5± 0.1
VCEO
2SB649 : -120 V
2SB649A : -160 V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
1: Emitter
2: Collector
3: Base
Dimensions in Millimeters
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise
www.DataSheet.co.kr
Test
conditions
specified
MIN
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)CBO Ic=-1mA IE=0
V(BR)CEO Ic=-10mA IB=0
V(BR)EBO
ICBO
IEBO
IE=-1mA Ic=0
VCB=- 160 V, IE=0
VEB= -4V , IC =0
2SB649
2SB649A
-180
-120
-160
-5
DC current gain
hFE(1) *
2SB649
VCE= -5V, IC= -150 mA
2SB649A
hFE(2) * VCE=- 5V, IC = -500mA
60
60
30
MAX UNIT
V
V
V
-10 A
-10 A
320
200
Collector-emitter saturation voltage
VCE (sat) * IC =- 500 mA, IB=- 50mA
-1 V
Base-emitter voltage
VBE *
VCE=- 5V,IC=-150mA
-1.5 V
Transition frequency
fT VCE=-5V,, IC=- 150 mA
140 MHz
Collector output capacitance
Cob VCB=-10 V , IE=0,f=1MHz
27
pF
* The 2SB649 and 2SB649A are grouped by hFE1 as follows.
Rank
2SB649
2SB649A
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
B
60 - 120
60 - 120
C
100 - 200
100 - 200
D
160 - 320
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Any changing of specification will not be informed individual
Page 1 of 2
Datasheet pdf - http://www.DataSheet4U.net/
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Pages | Pages 2 | ||
Télécharger | [ 2SB649A ] |
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