GWM160-0055X1 Datasheet PDF - IXYS Corporation
| Part Number | GWM160-0055X1 | |
| Description | Three phase full Bridge | |
| Manufacturers | IXYS Corporation | |
| Logo |  |
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www.DataSheet.co.kr
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
GWM 160-0055X1
VDSS = 55 V
ID25 = 150 A
RDSon typ. = 2.7 mW
L+
G3 G5
G1
S3 S5
S1 L1
L2
L3
G2 G4 G6
S2 S4 S6
L-
MOSFETs
Symbol Conditions
VDSS
VGS
TJ = 25°C to 150°C
ID25 TC = 25°C
ID90 TC = 90°C
IF25 TC = 25°C (diode)
IF90 TC = 90°C (diode)
Maximum Ratings
55 V
± 20 V
150 A
115 A
120 A
75 A
Symbol Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
R 1)
DSon
VGS(th)
IDSS
IGSS
on chip level at
VGS = 10 V; ID = 100 A
VDS = 20 V; ID = 1 mA
VDS = VDSS; VGS = 0 V
VGS = ± 20 V; VDS = 0 V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
Qg
Qgs VGS = 10 V; VDS = 12 V; ID = 160 A
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Erecoff
inductive load
VGS = 10 V; VDS = 24 V
ID = 100 A; RG = 39 Ω;
TJ = 125°C
RthJC
RthJH
with heat transfer paste (IXYS test setup)
1) VDS = ID·(RDS(on) + 2RPin to )Chip
2.7
4.5
2.5
0.1
105
tbd
tbd
140
125
550
120
0.17
0.60
0.004
1.3
3.3 mW
mW
4.5 V
1 µA
mA
0.2 µA
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
1.0 K/W
1.6 K/W
Straight leads
Surface Mount Device
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
Package options
• 2 lead forms available
- straight leads (SL)
- SMD lead version (SMD)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307i
1-6
Datasheet pdf - http://www.DataSheet4U.net/
|
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www.DataSheet.co.kr
GWM 160-0055X1
12
10
ID = 160 A
TJ = 25°C
8
6
VDS = 12 V
VDS = 40 V
4
2
0
0 20 40 60 80 100 120 140 160
QG [nC]
Fig.7 Gate charge characteristic
0.30
0.25
0.20
VDS = 24 V
VGS = +10/0 V
RG = 39 Ω
TJ = 125°C
0.15
0.10
300
250
tr
td(on)
200
150
100
0.05
Eon
0.00
0 20
Erec(off) x10
50
0
40 60 80 100 120 140 160 180
ID [A]
Fig. 9 Typ. turn-on energy & switching times
vs. collector current, inductive switching
1.4
VDS = 24 V
1.2 VGS = +10/0 V
1.0
ID = 160 A
TJ = 125°C
0.8
0.6
0.4
0.2
0.0
0
Eon
20
Erec(off) x10
40 60
RG [Ω]
80
tr 350
td(on)
300
250
200
150
100
50
0
100 120
Fig. 11 Typ. turn-on energy & switching times
vs. gate resistor, inductive switching
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
200
180
160
140
120
100
80
60
40
20
0
0
TJ = 175°C
25 50 75 100 125 150 175
TC [°C]
Fig. 8 Drain current ID vs. case temperature TC
1.2
VDS = 24 V
1.0 VGS = +10/0 V
RG = 39 Ω
0.8 TJ = 125°C
1200
1000
800
0.6 600
0.4 td(off) 400
0.2 Eoff
tf 200
0.0
0
0
20 40 60 80 100 120 140 160 180
ID [A]
Fig. 10 Typ. turn-off energy & switching times
vs. collector current, inductive switching
2.2
2.0
1.8
1.6
1.4
VDS = 24 V
VGS = +10/0 V
ID = 160 A
TJ = 125°C
1.2
1.0
0.8
Eoff
0.6
0.4
0.2
0.0
0
20 40
60
RG [Ω]
80
td(off)
tf
100
1650
1500
1350
1200
1050
900
750
600
450
300
150
0
120
Fig. 12 Typ. turn-off energy & switching times
vs. gate resistor, inductive switching
20110307i
5-6
Datasheet pdf - http://www.DataSheet4U.net/
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