|
|
PDF 2SC3604 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3604 | |
| Descripción | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION | |
| Fabricantes | NEC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SC3604 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
DATA SHEET
SILICON TRANSISTOR
2SC3604
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3604 is an NPN epitaxial transistor designed for low-
noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise
and high-gain characteristics in a wide collector current region, and
has a wide dynamic range.
PACKAGE DIMENSIONS (in mm)
E
FEATURES
• Low noise
: NF = 1.6 dB TYP. @ f = 2.0 GHz
• High power gain : GA = 12 dB TYP. @ f = 2.0 GHz
3.8 MIN.
C
3.8 MIN.
B
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL RATING
VCBO
20
VCEO
10
VEBO
1.5
IC 65
PT (TC = 25 °C)
580
Tj 200
Tstg -65 to +150
UNIT
V
V
V
mA
mW
°C
°C
45 °
E
0.5 ± 0.05
2.55 ± 0.2
φ 2.1
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Reverse Transfer Capacitance
Noise Figure
Insertion Gain
Maximum Available Gain
Power Gain
SYMBOL
TEST CONDITIONS
ICBO VCB = 10 V, IE = 0
IEBO VEB = 1 V, IC = 0
hFE VCE = 8 V, IC = 20 mA Pulse
fT VCE = 8 V, IC = 20 mA
Cre
NFNote
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 8 V, IC = 7 mA, f = 2.0 GHz
|S21e|2 VCE = 8 V, IC = 20 mA, f = 2.0 GHz
MAG VCE = 8 V, IC = 20 mA, f = 2.0 GHz
GA VCE = 8 V, IC = 7 mA, f = 2.0 GHz
MIN.
50
9.0
TYP.
100
8
0.2
1.6
11
13
12
MAX.
1.0
1.0
250
0.7
2.3
UNIT
µA
µA
GHz
pF
dB
dB
dB
dB
Document No. P11675EJ2V0DS00 (2nd edition)
Date Published August 1996 P
Printed in Japan
© 1996
1 page  
2SC3604
MARKING
Because the package of the micro X package transistor is too small to be marked, the following indication is
employed.
Part Number
Part Number
2SC2148
2SC2149
2SC2150
2SC2367
2SC2585
2SC1223
Marking
A
B
C
H
K
D
Part Number
2SC3603
2SC3604
2SC3587
Marking
0
2
1
E
C Aa
B
Part number
Lot
E
Lot
Lot indication is colored as shown below.
The sequence black, brown, red, blue, and green, forms one cycle and this cycle is repeated.
Year
Month
1
2
3
4
5
6
7
8
9
10
11
12
1988
j Black
k
l
m
n
o
p
q
r
s
t
u
1989
v
w
x
y
z
a Brown
b
c
d
e
f
g
1990
h
i
j
k
l
m
n
o
p
q
r
s
1991
t
u
v
w
x
y
z
a Red
b
c
d
e
1992
f
g
h
i
j
k
l
m
n
o
p
q
1993
r
s
t
u
v
w
x
y
z
a Blue
b
c
1994
d
e
f
g
h
i
j
k
l
m
n
o
1995
p
q
r
s
t
u
v
w
x
y
z
a Green
1996
b
c
d
e
f
g
h
i
j
k
l
m
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SC3604.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SC3600 | PNP/NPN Epitaxial Planar Silicon Transistors |  Sanyo Semicon Device |
| 2SC3601 | Ultrahigh-Definition CRT Display Video Output Applications | Sanyo Semicon Device |
| 2SC3603 | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION | NEC |
| 2SC3604 | NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION | NEC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |