DataSheetWiki


2SC3600 fiches techniques PDF

Sanyo Semicon Device - PNP/NPN Epitaxial Planar Silicon Transistors

Numéro de référence 2SC3600
Description PNP/NPN Epitaxial Planar Silicon Transistors
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





1 Page

No Preview Available !





2SC3600 fiche technique
Ordering number:ENN1765B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1406/2SC3600
Ultrahigh-Definition CRT Display
Video Output Applications
Applications
· Ultrahigh-definition CRT display.
· Video output.
· Color TV chroma output.
· Wide-band amp.
Package Dimensions
unit:mm
2009B
[2SA1406/2SC3600]
8.0
4.0
2.7
Features
· High fT : fT typ=400MHz.
· High breakdown voltage : VCEO200V.
· Small reverse transfer capacitance and excellent HF
response
: Cre=1.4pF (NPN), 1.7pF (PNP).
· Complementary PNP and NPN types.
· Adoption of FBET process.
( ) : 2SA1406
Specifications
1.6
0.8
0.8
0.6
3.0
12 3
2.4
4.8
0.5
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
Conditions
Ratings
(–)200
(–)200
(–)4
(–)100
(–)200
1.2
7
150
–55 to +150
Unit
V
V
V
mA
mA
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
ICBO
IEBO
hFE1
hFE2
fT
VCB=(–)150V, IE=0
VEB=(–)2V, IC=0
VCE=(–)10V, IC=(–)10mA
VCE=(–)10V, IC=(–)60mA
VCE=(–)10V, IC=(–)30mA
* : The SA1406/2SC3600 are classified by 10mA hFE as follows :
Rank
C
D
E
F
hFE 40 to 80 60 to 120 100 to 200 160 to 320
Ratings
min typ max
Unit
(–)0.1 µA
(–)1.0 µA
40* 320*
20
400 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92502AS (KT)/71598HA (KT)/3127KI/2225MW, TS No.1765-1/4

PagesPages 4
Télécharger [ 2SC3600 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SC3600 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
Sanyo Semicon Device
2SC3601 Ultrahigh-Definition CRT Display Video Output Applications Sanyo Semicon Device
Sanyo Semicon Device
2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION NEC
NEC
2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION NEC
NEC

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche