|
|
Número de pieza | 2SC3582 | |
Descripción | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR | |
Fabricantes | NEC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SC3582 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
2SC3582
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3582 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.
PACKAFE DIMENSIONS
in millimeters (inches)
5.2 MAX.
(0.204 MAX.)
FEATURES
• NF
1.2 dB TYP.
• Ga
12 dB TYP.
@f = 1.0 GHz
@f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage VCEO
10
Emitter to Base Voltage
VEBO
1.5
Collector Current
IC 65
Total Power Dissipation
PT
600
Junction Temperature
Tj
150
Storage Temperature
Tstg 65 to +150
V
V
V
mA
mW
C
C
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL MIN. TYP.
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE 50 100
Gain Bandwidth Product
fT
8
Feed-Back Capacitance
Insertion Power Gain
Cre
S21e2
9
0.4
11
Maximum Available Gain
MAG
13
Noise Figure
NF 1.2
hFE Classification
Class
K
Marking
K
hFE 50 to 250
MAX.
1.0
1.0
250
0.9
2.5
0.5
(0.02)
1.27
(0.05)
2.54
(0.1)
123
1. Base
EIAJ : SC-43B
2. Emitter JEDEC : TO-92
3. Collector IEC : PA33
UNIT
A
A
GHz
pF
dB
dB
dB
TEST CONDITIONS
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
VCE = 8 V, IC = 20 mA
VCE = 8 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
VCE = 8 V, IC = 20 mA, f = 1.0 GHz
VCE = 8 V, IC = 20 mA, f = 1.0 GHz
VCE = 8 V, IE = 7 mA, f = 1.0 GHz
Document No. P10359EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
© 1984
1 page [MEMO]
2SC3582
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet 2SC3582.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SC3580 | SMALL-SIGNAL TRANSISTOR | Isahaya Electronics |
2SC3581 | SMALL-SIGNAL TRANSISTOR | Isahaya Electronics Corporation |
2SC3582 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR | NEC |
2SC3582 | Silicon NPN RF Transistor | Inchange Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |