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PDF 2SC3515 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3515 | |
| Descripción | Silicon NPN Triple Diffused Type TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC3515 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC3515
2SC3515
HIGH Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
Unit: mm
· High voltage: VCBO = 300 V, VCEO = 300 V
· Low saturation voltage: VCE (sat) = 0.5 V (max)
· Small collector output capacitance: Cob = 3 pF (typ.)
· Complementary to 2SA1384
· Small flat package
· PC = 1.0 to 2.0 W (mounted on ceramic substrate)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
PC
(Note 1)
Tj
Tstg
300
300
6
100
20
500
1000
150
−55 to 150
Note 1: Mounted on ceramic substrate (250 mm2 × 0.8 mmt)
Unit
V
V
V
mA
mA
mW
°C
°C
PW-MINI
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
1 2002-08-13
1 page  
1.2
(1)
1.0
0.8
PC – Ta
(1) Mounted on ceramic substrate
(250 mm2 ´ 0.8 mmt)
(2) No heat sink
0.6
(2)
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
2SC3515
Safe Operating Area
500
300 IC max (pulse)
IC max (continuous)
10 ms*
100
100 ms*
50
30
DC operation
Ta = 25°C
10
5
3
1 ms*
1
*: Single no repetitive pulse
0.5 Ta = 25°C
0.3 Curves must be derated linearly
with increase in temperature VCEO max
Tested without a substrate.
0.1
1 3 10 30
100 300
Collector-emitter voltage VCE (V)
1000
5 2002-08-13
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SC3515.PDF ] | |
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