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Número de pieza | 2SC3422 | |
Descripción | Silicon NPN Epitaxial Type TRANSISTOR | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SC3422 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3422
Audio Frequency Power Amplifier
Low-Speed Switching
2SC3422
Unit: mm
• Suitable for the output stage of 5-watt car radios and car stereos.
• Good hFE linearity
• Complementary to 2SA1359.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
VCBO
VCEO
VEBO
IC
IB
PC
40 V
40 V
5V
3A
1A
1.5
W
10
JEDEC
―
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA
TOSHIBA
―
2-8H1A
Note1: Using continuously under heavy loads (e.g. the application of high
Weight: 0.82 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2009-12-21
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2SC3422.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SC3420 | NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) | Toshiba Semiconductor |
2SC3420 | Plastic-Encapsulated Transistors | TRANSYS Electronics |
2SC3420 | SILICON POWER TRANSISTOR | SavantIC |
2SC3421 | Silicon NPN Epitaxial Type TRANSISTOR | Toshiba Semiconductor |
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