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CEK01N6G fiches techniques PDF

CET - N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence CEK01N6G
Description N-Channel Enhancement Mode Field Effect Transistor
Fabricant CET 
Logo CET 





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CEK01N6G fiche technique
www.DataSheet.co.kr
CEK01N6G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
600V, 1A, RDS(ON) = 9.3 @VGS = 10V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TO-92(Bulk) & TO-92(Ammopack) package.
D
GD S
TO-92(Ammopack)
GD S
TO-92(Bulk)
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed b
VDS 600
VGS ±30
IDa 0.4
IDM 1.6
Maximum Power Dissipation
PD 3.1
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Lead
Symbol
RθJL
Limit
40
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 1. 2009.Nov.
http://www.cetsemi.com
Datasheet pdf - http://www.DataSheet4U.net/

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