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PDF 2SC3357 Data sheet ( Hoja de datos )

Número de pieza 2SC3357
Descripción NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Fabricantes NEC 
Logotipo NEC Logotipo



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DATA SHEET
SILICON TRANSISTOR
2SC3357
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
DESCRIPTION
The 2SC3357 is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
PACKAGE DIMENSIONS
(Unit: mm)
It has large dynamic range and good current characteristic.
FEATURES
4.5±0.1
1.6±0.2
1.5±0.1
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V,
IC = 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V,
IC = 40 mA, f = 1.0 GHz
• Large PT in Small Package
PT : 2 W with 16 cm2 × 0.7 mm Ceramic Substrate.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage VCEO
12
V
V
ECB
0.42
±0.06
0.42±0.06
1.5 0.47
±0.06
3.0
0.41
0.03
+0.05
Term, Connection
E : Emitter
C : Collector (Fin)
B : Base
(SOT-89)
Emitter to Base Voltage
VEBO
3.0 V
Collector Current
IC 100 mA
Total Power Dissipation
PT*
1.2 W
Thermal Resistance
Rth(j-a)*
62.5
°C/W
Junction Temperature
Tj
150 °C
Storage Temperature
Tstg 65 to +150 °C
* mounted on 16 cm2 × 0.7 mm Ceramic Substrate
Document No. P10357EJ4V1DS00 (4th edition)
Date Published March 1997 N
Printed in Japan
© 1985

1 page




2SC3357 pdf
S11e, S22e-FREQUENCY
CONDITION VCE = 10 V
0.09
0.007.413300.008.42
0.41
120
0.10
0.40
110
0.11
0.39
100
0.12 0.13
0.38 0.37
90
0.2
0.14
0.36
80
0.15
0.35
70
0.16
0.34
060
0.303.17
0.302.18
50
ENT 0.4
0.6
0.8
1.0
3.0
4.0
6.0
0.1
0.2
0.3
0.4
S11 f = 20 GHz
REACTANCE COMPONENT
( )R
––––
ZO
0.2
f = 0.2 GHz
0.4
f = 0.2 GHz IC =0.620 mA
0.8
IC = 20 mA
f = 2.0 GHz
10
20
50
2SC3357
S21e-FREQUENCY
CONDITION VCE = 10 V
IC = 20 mA
90°
120°
f = 0.2 GHz
60°
150°
S21e
30° 150°
180°
f = 2.0 GHz
3 6 9 12 15 0° 180°
120°
S12e-FREQUENCY
CONDITION VCE = 10 V
IC = 20 mA
90°
60°
f = 2.0 GHz
S12e
30°
f = 0.2 GHz
0.1 0.2 0.3 0.4 0.5 0°
150°
120°
90°
30° −150°
60°
120°
90°
30°
60°
5

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