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2SC3328 fiches techniques PDF

Toshiba Semiconductor - NPN EPITAXIAL TYPE (POWER AMPLIFIER/ SWITCHING APPLICATIONS)

Numéro de référence 2SC3328
Description NPN EPITAXIAL TYPE (POWER AMPLIFIER/ SWITCHING APPLICATIONS)
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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2SC3328 fiche technique
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3328
Power Amplifier Applications
Power Switching Applications
2SC3328
Unit: mm
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
High-speed switching: tstg = 1.0 µs (typ.)
Complementary to 2SA1315
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
80
80
5
2
1
900
150
55 to 150
Unit
V
V
V
A
A
mW
°C
°C
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
1 2004-07-07
Free Datasheet http://www.Datasheet4U.com

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