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DMN3010LSS fiches techniques PDF

Diodes Incorporated - SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Numéro de référence DMN3010LSS
Description SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Fabricant Diodes Incorporated 
Logo Diodes Incorporated 





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DMN3010LSS fiche technique
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Features
Low On-Resistance
9m@ VGS = 10V
13m@ VGS = 4.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
DMN3010LSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
Case: SOP-8L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072g (approximate)
SOP-8L
S
D
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Pulsed Drain Current (Note 3)
Steady
State
TA = 25°C
TA = 70°C
SD
SD
GD
TOP VIEW
Internal Schematic
Symbol
VDSS
VGSS
ID
IDM
Value
30
±20
16
13
64
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
2.5
50
-55 to +150
Notes:
1. Device mounted on 2 oz. Copper pads on FR-4 PCB, with RθJA = 50°C
2. No purposefully added lead.
3. Pulse width 10μS, Duty Cycle 1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Unit
W
°C/W
°C
DMN3010LSS
Document number: DS31259 Rev. 6 - 2
1 of 5
www.diodes.com
November 2008
© Diodes Incorporated
Datasheet pdf - http://www.DataSheet4U.net/

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