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2SC3324 fiches techniques PDF

Toshiba Semiconductor - Silicon NPN Epitaxial Type TRANSISTOR

Numéro de référence 2SC3324
Description Silicon NPN Epitaxial Type TRANSISTOR
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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2SC3324 fiche technique
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3324
2SC3324
Audio Frequency Low Noise Amplifier Applications
Unit: mm
High voltage: VCEO = 120 V
Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)
= 0.95 (typ.)
High hFE: hFE = 200~700
Low noise: NF (2) = 0.2dB (typ.), 3dB (max)
Complementary to 2SA1312
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
120
120
5
100
20
150
125
55~125
V
V
V
mA
mA
mW
°C
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1 2007-11-01

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