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Numéro de référence | 2SC3311A | ||
Description | Silicon NPN epitaxial planer type(For low-frequency amplification) | ||
Fabricant | Panasonic Semiconductor | ||
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1 Page
Transistor
2SC3311A
Silicon NPN epitaxial planer type
For low-frequency amplification
Complementary to 2SA1309A
s Features
q Optimum for high-density mounting.
q Allowing supply with the radial taping.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
60
50
7
200
100
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
4.0±0.2
Unit: mm
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICBO
ICEO
VCBO
VCB = 10V, IE = 0
VCE = 10V, IB = 0
IC = 10µA, IE = 0
0.1 µA
1 µA
60 V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE*
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 2mA
50 V
7V
160 460
Collector to emitter saturation voltage VCE(sat)
Transition frequency
fT
IC = 100mA, IB = 10mA
VCB = 10V, IE = –2mA, f = 200MHz
0.1 0.3
V
150 MHz
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
3.5 pF
*hFE Rank classification
Rank
Q
hFE 160 ~ 260
R
210 ~ 340
S
290 ~ 460
1
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Pages | Pages 2 | ||
Télécharger | [ 2SC3311A ] |
No | Description détaillée | Fabricant |
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