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PDF NX3DV221 Data sheet ( Hoja de datos )
| Número de pieza | NX3DV221 | |
| Descripción | High-speed USB 2.0 switch | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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NX3DV221
High-speed USB 2.0 switch with enable
Rev. 2 — 9 November 2011
Product data sheet
1. General description
The NX3DV221 is a high-bandwidth switch designed for the switching of high-speed USB
2.0 signals in handset and consumer applications, such as cell phones, digital cameras,
and notebooks with hubs or controllers with limited USB I/Os. The wide bandwidth (1
GHz) of this switch allows signal to pass with minimum edge and phase distortion. The
device multiplexes differential outputs from a USB host device to one of two
corresponding outputs. The switch is bidirectional and offers little or no attenuation of the
high-speed signals at the outputs. It is designed for low bit-to-bit skew and high
channel-to-channel noise isolation, and is compatible with various standards, such as
high-speed USB 2.0 (480 Mbps).
2. Features and benefits
Wide supply voltage range from 2.3 V to 3.6 V
Switch voltage accepts signals up to 5.5 V
1.8 V control logic at VCC = 3.6 V
Low-power mode when OE is HIGH (2 A maximum)
6 (maximum) ON resistance
0.1 (typical) ON resistance mismatch between channels
6 pF (typical) ON-state capacitance
High bandwidth (1.0 GHz typical)
Latch-up performance exceeds 100 mA per JESD 78B Class II Level A
ESD protection:
HBM JESD22-A114F Class 3A exceeds 8000 V
CDM JESD22-C101E exceeds 1000 V
HBM exceeds 12000 V for I/O to GND protection
Specified from 40 C to +85 C
3. Applications
Routes signals for USB 1.0, 1.1 and 2.0
Datasheet pdf - http://www.DataSheet4U.net/
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NXP Semiconductors
NX3DV221
High-speed USB 2.0 switch with enable
Table 7. Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter
Conditions
Tamb = 25 C
Min Typ Max
IOFF power-off
per pin; VCC = 0 V
leakage current VSW = 0 V to 2.7 V
- 0.01 -
VSW = 0 V to 3.6 V
- 0.01 -
VSW = 0 V to 5.25 V
- 0.01 -
IS(OFF)
OFF-state
nD+ and nD- ports;
leakage current see Figure 3
VCC = 2.7 V, 3.6 V
---
ICC supply current VCC = 2.7 V, 3.6 V
OE = GND
- 18.5 -
ICC
additional
supply current
OE = VCC (low power mode)
S, OE input;
one input at 1.8 V;
other inputs at GND or VCC
- 0.01 -
VCC = 2.7 V
- 0.8 -
VCC = 3.6 V
- 12.5 -
CI input
VSW = GND or VCC;
capacitance VCC = 2.5 V, 3.3 V
-1-
CS(OFF) OFF-state
capacitance
VSW = GND or VCC;
VCC = 2.5 V, 3.3 V
-3-
CS(ON)
ON-state
capacitance
VSW = GND or VCC;
VCC = 2.5 V, 3.3 V
-6-
Tamb =-40 C to +85 C Unit
Min Max
- 2.0 A
- 2.0 A
- 3.0 A
- 1 A
- 30 A
- 2 A
- 1.8 A
- 20 A
- 2.5 pF
- 5.0 pF
- 7.5 pF
11.1 Test circuits
VIL or VIH
VIH
VCC
S
Dn
OE
VI
1Dn 1
2Dn 2
GND
switch IS
VI = 0 V; VO = 0 V to 5.25 V
Fig 3. Test circuit for measuring OFF-state leakage current
switch
1
2
S
VIL
VIH
OE
VIH
VIH
VO
001aao080
NX3DV221
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 November 2011
© NXP B.V. 2011. All rights reserved.
5 of 18
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NXP Semiconductors
+ 0.5 V
NX3DV221
High-speed USB 2.0 switch with enable
-0.5 V
Time scale (0.25 ns/DIV)
001aao088
Fig 11. Eye-pattern 480 Mbps USB signal with switch (normally closed path)
+ 0.5 V
-0.5 V
Time scale (0.25 ns/DIV)
001aao089
Fig 12. Eye-pattern 480 Mbps USB signal with switch (normally open path)
NX3DV221
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 November 2011
© NXP B.V. 2011. All rights reserved.
11 of 18
Datasheet pdf - http://www.DataSheet4U.net/
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| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet NX3DV221.PDF ] | |
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