DataSheetWiki


2SC3179 fiches techniques PDF

Sanken electric - Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)

Numéro de référence 2SC3179
Description Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)
Fabricant Sanken electric 
Logo Sanken electric 





1 Page

No Preview Available !





2SC3179 fiche technique
2SC3179
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262)
Application : Audio and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC3179
80
60
6
4
1
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
Conditions
VCB=80V
VEB=6V
IC=25mA
VCE=4V, IC=1V
IC=2A, IB=0.2A
VCE=12V, IE=–0.2A
VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) () (A) (V) (V) (mA)
20 10 2 10 –5 200
IB2
(mA)
–200
ton
(µs)
0.2typ
(Ta=25°C)
2SC3179 Unit
100max
100max
µA
µA
60min
V
40min
0.6max
V
15typ
MHz
60typ
pF
tstg
(µs)
1.9typ
tf
(µs)
0.29typ
External Dimensions MT-25(TO220)
10.2±0.2
4.8±0.2
2.0±0.1
a ø3.75±0.2
b
1.35
0.65
+0.2
-0.1
2.5 2.5
1.4
BCE
Weight : Approx 2.6g
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
4
IB=100mA
80mA
3
60mA
40mA
30mA
2
20mA
1 10mA
0
01 2 34
Collector-Emitter Voltage VCE(V)
V CE( s a t ) – I B Characteristics (Typical)
1.0
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
4
3
0.5
3A
2A
IC=1A
0
0.005 0.01
0.05 0.1
Base Current IB(A)
0.5 1
2
1
0
0.4
0.6 0.8 1.0
Base-Emittor Voltage VBE(V)
1.2
h FE– I C Characteristics (Typical)
500
(VCE=4V)
h FE– I C Temperature Characteristics (Typical)
200
(VCE=4V)
Typ
100
50
125˚C
100
25˚C
–30˚C
50
θ j-a– t Characteristics
5
1
20
0.01
0.1 0.5 1
Collector Current IC(A)
20
4 0.02
0.1 0.5 1
Collector Current IC(A)
0.5
41
10 100
Time t(ms)
1000
f T– I E Characteristics (Typical)
(VCE=12V)
40
30
20 Typ
10
0
–0.005 –0.01
62
–0.1
–0.5 –1
Emitter Current IE(A)
–4
Safe Operating Area (Single Pulse)
10
5
DC
1
0.5
0.2
3
Without Heatsink
Natural Cooling
10 50
Collector-Emitter Voltage VCE(V)
100
Pc–Ta Derating
30
20
10
Without Heatsink
2
0
0 25 50 75 100 125
Ambient Temperature Ta(˚C)
150

PagesPages 1
Télécharger [ 2SC3179 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SC3170 SILICON POWER TRANSISTOR SavantIC
SavantIC
2SC3171 SILICON POWER TRANSISTOR SavantIC
SavantIC
2SC3173 NPN Epitaxial Planar Type Silicon Transistor Sanyo Semicon Device
Sanyo Semicon Device
2SC3174 CRT Display Horizontal Deflection Output Sanyo Semicon Device
Sanyo Semicon Device

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche