NP88N04DHE Datasheet PDF - NEC
| Part Number | NP88N04DHE | |
| Description | MOS FIELD EFFECT TRANSISTOR | |
| Manufacturers | NEC | |
| Logo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP88N04EHE, NP88N04KHE
NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R> ORDERING INFORMATION
PART NUMBER
NP88N04EHE-E1-AY Note1, 2
NP88N04EHE-E2-AY Note1, 2
NP88N04KHE-E1-AY Note1
NP88N04KHE-E2-AY Note1
NP88N04CHE-S12-AZ Note1, 2
NP88N04DHE-S12-AY Note1, 2
NP88N04MHE-S18-AY Note1
NP88N04NHE-S18-AY Note1
LEAD PLATING
Pure Sn (Tin)
Sn-Ag-Cu
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
(TO-220)
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 44 A)
• Low input capacitance
Ciss = 7300 pF TYP.
• Built-in gate protection diode
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14236EJ8V0DS00 (8th edition)
Date Published October 2007 NS
1999, 2000, 2007
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Datasheet pdf - http://www.DataSheet4U.net/
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NP88N04EHE, NP88N04KHE, NP88N04CHE, NP88N04DHE, NP88N04MHE, NP88N04NHE
Figure6. FORWARD TRANSFER CHARACTERISTICS
100 Pulsed
10
TA = −50°C
25°C
75°C
1 175°C
0.1
0.01 2
VDS = 10 V
345 67
VGS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
VDS = 10 V
Pulsed
10
TA = 175°C
75°C
1 25°C
−50°C
0.1
0.01
0.01
0.1 1 10
ID - Drain Current - A
100
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
15 Pulsed
10
5 VGS = 10 V
0
1 10 100 1000
ID - Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
500
400
VGS = 10 V
300
200
100
0
0
Pulsed
0.5 1.0 1.5 2.0
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
Pulsed
5
ID = 44 A
0
0 5 10 15 20
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4.0
VDS = VGS
ID = 250 μA
3.0
2.0
1.0
0
−50 0 50 100 150
Tch - Channel Temperature - °C
Data Sheet D14236EJ8V0DS
5
Datasheet pdf - http://www.DataSheet4U.net/
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