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IPD082N10N3G fiches techniques PDF

Infineon Technologies - Power-Transistor

Numéro de référence IPD082N10N3G
Description Power-Transistor
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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IPD082N10N3G fiche technique
www.DataSheet.co.kr
IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
OptiMOS3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
Product Summary
V DS
R DS(on),max (TO 252)
ID
100 V
8.2 m
80 A
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21 *
Type
IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
Package
Marking
PG-TO220-3
086N10N
PG-TO262-3
086N10N
PG-TO263-3
083N10N
PG-TO252-3
082N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=73 A, R GS=25
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
80
58
320
110
±20
125
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
1)J-STD20 and JESD22
2) See figure 3
* Excep D-PAK ( TO-252-3 )
Rev. 2.5
page 1
2010-07-16
Datasheet pdf - http://www.DataSheet4U.net/

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