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Número de pieza | 2SC3130 | |
Descripción | Silicon NPN epitaxial planer type(For high-frequency amplification/oscillation/mixing) | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
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2SC3130
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
s Features
q High transition frequency fT.
q Small collector output capacitance Cob and common base reverse
transfer capacitance Crb.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
15
10
3
50
150
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : 1S
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
ICBO
VCB = 10V, IE = 0
1 µA
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE*
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 4V, IC = 5mA
10 V
3V
75 200 400
Collector to emitter saturation voltage VCE(sat)
IC = 20mA, IB = 4mA
0.5 V
Transition frequency
Collector output capacitance
fT
Cob
VCB = 4V, IE = –5mA, f = 200MHz 1.4 1.9 2.5 GHz
VCB = 4V, IE = 0, f = 1MHz
1.4 pF
Base time constant
rbb' · CC
VCB = 4V, IE = –5mA, f = 31.9MHz
11
ps
Common emitter reverse transfer capacitance Crb
hFE ratio
∆hFE
VCB = 4V, IE = 0, f = 1MHz
VCE = 4V, IC = 100µA
VCE = 4V, IC = 5mA
0.45
0.75
1.6
pF
*hFE Rank classification
Rank
P
hFE
Marking Symbol
75 ~ 130
1SP
Q
110 ~ 220
1SQ
R
200 ~ 400
1SR
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2SC3130.PDF ] |
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