(PDF) 2SC3072 Datasheet - Silicon NPN Epitaxial Type TRANSISTOR

Número de pieza	2SC3072
Descripción	Silicon NPN Epitaxial Type TRANSISTOR
Fabricantes	Toshiba Semiconductor
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No Preview Available ! TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications 2SC3072 Unit: mm · High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) · Low collector saturation voltage : VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) · High power dissipation : PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse (Note 1) Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg 50 40 20 8 5 8 0.5 1.0 10 150 −55 to 150 V V V A A W °C °C Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2002-07-23 1 page

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PDF 2SC3072 Data sheet ( Hoja de datos )