DataSheetWiki


VB20120SG fiches techniques PDF

Vishay - High-Voltage Trench MOS Barrier Schottky Rectifier

Numéro de référence VB20120SG
Description High-Voltage Trench MOS Barrier Schottky Rectifier
Fabricant Vishay 
Logo Vishay 





1 Page

No Preview Available !





VB20120SG fiche technique
www.DataSheet.co.kr
New Product
V20120SG, VF20120SG, VB20120SG & VI20120SG
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.54 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
V20120SG
3
2
1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VF20120SG
123
PIN 1
PIN 2
PIN 3
TO-262AA
K
A
NC
VB20120SG
NC K
A HEATSINK
3
2
1
VI20120SG
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 20 A
TJ max.
20 A
120 V
150 A
0.78 V
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB,
and TO-262AA package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL V20120SG
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
VRRM
IF(AV)
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH
Peak repetitive reverse current
at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C
Voltage rate of change (rated VR)
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
EAS
IRRM
dV/dt
VAC
Operating junction and storage temperature range
TJ, TSTG
VF20120SG VB20120SG
120
20
150
80
0.5
10 000
1500
- 40 to + 150
VI20120SG
UNIT
V
A
A
mJ
A
V/µs
V
°C
Document Number: 88994
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/

PagesPages 5
Télécharger [ VB20120SG ]


Fiche technique recommandé

No Description détaillée Fabricant
VB20120S High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay
VB20120S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay
VB20120SG High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche