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PDF 2SC2778 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2778 | |
| Descripción | Silicon NPN epitaxial planer type(For high-frequency amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC2778 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Transistor
2SC2778
Silicon NPN epitaxial planer type
For high-frequency amplification
s Features
q Optimum for RF amplification, oscillation, mixing, and IF of FM/
AM radios.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
30
20
5
30
200
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : K
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector to base voltage
VCBO
IC = 10µA, IE = 0
30
V
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
VCEO
VEBO
hFE*
IC = 2mA, IB = 0
IE = 10µA, IC = 0
VCE = 10V, IC = 1mA
20 V
5V
70 250
Transition frequency
fT
VCB = 10V, IE = –1mA, f = 200MHz 150
230
MHz
Common emitter reverse transfer capacitance Cre
VCE = 10V, IC = 1mA, f = 10.7MHz
1.3
pF
*hFE Rank classification
Rank
B
hFE
Marking Symbol
70 ~ 160
KB
C
110 ~ 250
KC
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC2778.PDF ] | |
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