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PDF 2SC2703 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2703 | |
| Descripción | Silicon NPN Epitaxial Type TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC2703 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2703
Audio Power Amplifier Applications
2SC2703
Unit: mm
• High DC current gain: hFE = 100 to 320
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
30
30
5
1
0.1
900
150
−55 to 150
Unit
V
V
V
A
A
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 30 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA
hFE (1)
(Note)
VCE = 2 V, IC = 100 mA
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = 2 V, IC = 800 mA
IC = 800 mA, IB = 80 mA
VCE = 2 V, IC = 800 mA
VCE = 2 V, IC = 100 mA
VCB = 10 V, f = 1 MHz
Note: hFE (1) classification O: 100 to 200, Y: 160 to 320
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Min Typ. Max Unit
― ― 100 nA
― ― 100 nA
30 ― ―
V
100 ― 320
40 ― ―
― ― 0.5 V
― 0.9 1.5
V
― 150 ― MHz
― 13 ― pF
1 2004-07-07
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC2703.PDF ] | |
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