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PDF 2SC2644 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2644 | |
| Descripción | Silicon NPN Epitaxial Planar Type Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC2644
2SC2644
VHF~UHF Band Wideband Amplifier Applications
Unit: mm
· High gain
· Low IMD
· fT = 4 GHz (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
25
12
3.0
120
40
0.5
125
-55~125
Unit
V
V
V
mA
mA
W
°C
°C
Microwave Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1E
Weight: 0.21 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
ïS21eï2 (1)
ïS21eï2 (2)
NF (1)
NF (2)
VCE = 10 V, IC = 30 mA
VCE = 10 V, IC = 30 mA, f = 0.5 GHz
VCE = 10 V, IC = 30 mA, f = 1 GHz
VCE = 10 V, IC = 10 mA, f = 0.5 GHz
VCE = 10 V, IC = 10 mA, f = 1 GHz
Min Typ. Max Unit
¾ 4.0 ¾ GHz
¾ 14.0 ¾
¾ 8.5 ¾
dB
¾ 2.3 ¾
dB
¾ 3.0 ¾
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Collector output capacitance
Reverse transfer capacitance
ICBO
VCB = 10 V, IE = 0
¾ ¾ 1 mA
IEBO
VEB = 1.0 V, IC = 0
¾ ¾ 10 mA
hFE VCE = 5 V, IC = 50 mA
20 50 ¾
Cob ¾ 1.6 ¾ pF
VCB = 10 V, IE = 0, f = 1 MHz (Note)
Cre ¾ 1.1 ¾ pF
Note: Cre is measured by 3 terminal method with capacitance bridge.
1 2003-03-19
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC2644.PDF ] | |
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