(PDF) 2SC2612 Datasheet - Silicon NPN Triple Diffused

Número de pieza	2SC2612
Descripción	Silicon NPN Triple Diffused
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SC2612 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 23 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) IB PC * 1 Tj Tstg 1. Base 2. Collector (Flange) 3. Emitter Ratings 500 400 7 3 6 1.5 30 150 –55 to +150 Unit V V V A A A W °C °C 1 page Base to Emitter Saturation Voltage vs. Collector Current 10 3 1.0 0.3 0.1 0.03 0.01 0.005 0.01 TC = 25°C IC = 5 IB 0.03 0.1 0.3 1.0 Collector current IC (A) 35 2SC2612 Switching Time vs. Collector Current 10 3 tstg 1.0 tf 0.3 0.1 ton 0.03 0.01 0.005 0.01 IC = 5 IB1 = –5 IB2 VCC = 150 V 0.03 0.1 0.3 1.0 Collector current IC (A) 35 Switching Time vs. Case Temperature 5 3 tstg 1.0 tf 0.3 0.1 0.05 0 ton IC = 3 A IB1 = – IB2 = 0.6 A RL = 50 Ω VCC = 150 V 25 50 75 100 Case temperature TC (°C) 125 5 5 Page

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PDF 2SC2612 Data sheet ( Hoja de datos )