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PDF 2SC2570A-T Data sheet ( Hoja de datos )
| Número de pieza | 2SC2570A-T | |
| Descripción | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR | |
| Fabricantes | NEC | |
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DATA SHEET
NPN SILICON TRANSISTOR
2SC2570A
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.
FEATURES
• Low noise and high gain
• Wide dynamic range
: NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA
: NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 15 mA
ORDERING INFORMATION
Part Number
2SC2570A
2SC2570A-T
Quantity
Loose products (500 pcs)
Taping products (Box type) (2 500 pcs)
Remark To order evaluation samples, please contact your NEC sales office (available in 500-pcs units).
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Total Power Dissipation
Ptot
Junction Temperature
Tj
Storage Temperature
Tstg
Ratings
25
12
3.0
70
600
150
–65 to +150
Unit
V
V
V
mA
mW
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10404EJ3V0DS00 (3rd edition)
Date Published November 1999 N CP(K)
Printed in Japan
©
1980, 1999
1 page  
PACKAGE DIMENSION
TO-92 (UNIT:mm)
5.2 MAX.
0.5
1.27
2.54
123
1. BASE
2. EMITTER
3. COLLECTOR
EIAJ
JEDEC
IEC
: SC-43B
: TO-92
: PA33
2SC2570A
Data Sheet P10404EJ3V0DS00
5
5 Page | ||
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