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PDF 2SC2480 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2480 | |
| Descripción | Silicon NPN epitaxial planer type(For high-frequency amplification / oscillation / mixing) | |
| Fabricantes | Panasonic Semiconductor | |
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Transistors
2SC2480
Silicon NPN epitaxial planer type
For high-frequency amplification / oscillation / mixing
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
I Features
• High transition frequency fT
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
30
20
3
50
150
150
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10°
1: Base
2: Emitter
3: Collector
Marking Symbol: R
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Transition frequency *
Common emitter reverse transfer
capacitance
Power gain
Note) *: Rank classification
Symbol
VCBO
VEBO
hFE
VBE
fT
Cre
Crb
PG
Conditions
IC = 100 µA, IE = 0
IE = 10 µA, IC = 0
VCB = 10 V, IE = −2 mA
VCB = 10 V, IE = −2 mA
VCB = 10 V, IE = −15 mA, f = 200 MHz
VCB = 10 V, IE = −1 mA, f = 10.7 MHz
VCE= 6 V, IC = 0, f = 1 MHz
VCB = 10 V, IE = −1 mA, f = 200 MHz
Rank T S No-rank
fT (MHz)
800 to 1 400 1 000 to 1 600 800 to 1 600
Marking symbol
RT
RS
R
Product of no-rank is not classified and have no indication for rank.
Min
30
3
25
800
Typ Max
720
1 300
1
0.8
20
250
1 600
1.5
Unit
V
V
mV
MHz
pF
pF
dB
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC2480.PDF ] | |
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