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Numéro de référence | BFU660F | ||
Description | NPN wideband silicon RF transistor | ||
Fabricant | NXP Semiconductors | ||
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BFU660F
NPN wideband silicon RF transistor
Rev. 1 — 11 January 2011
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
1.2 Features and benefits
Low noise high linearity RF transistor
High output third-order intercept point 27 dBm at 1.8 GHz
40 GHz fT silicon technology
1.3 Applications
Analog/digital cordless applications
X-band high output buffer amplifier
ZigBee
SDARS second stage LNA
LTE, cellular, UMTS
Datasheet pdf - http://www.DataSheet4U.net/
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Pages | Pages 12 | ||
Télécharger | [ BFU660F ] |
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