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PDF 2SC2405 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2405 | |
| Descripción | Silicon NPN epitaxial planer type | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SC2405, 2SC2406
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SA1034 and 2SA1035
s Features
q Low noise voltage NV.
q High foward current transfer ratio hFE.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
Parameter
Symbol
Ratings
Collector to 2SC2405
base voltage 2SC2406
VCBO
35
55
Collector to 2SC2405
emitter voltage 2SC2406
VCEO
35
55
Emitter to base voltage
VEBO
5
Peak collector current
ICP
100
Collector current
IC
50
Collector power dissipation PC
200
Junction temperature
Tj
150
Storage temperature
Tstg –55 ~ +150
s Electrical Characteristics (Ta=25˚C)
Unit
V
V
V
mA
mA
mW
˚C
˚C
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : S(2SC2405)
T(2SC2406)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base
voltage
2SC2405
2SC2406
ICBO
ICEO
VCBO
VCB = 10V, IE = 0
VCE = 10V, IB = 0
IC = 10µA, IE = 0
100 nA
1 µA
35
V
55
Collector to emitter 2SC2405
voltage
2SC2406
VCEO
IC = 2mA, IB = 0
35
55
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise voltage
*hFE Rank classification
VEBO
hFE*
VCE(sat)
VBE
fT
NV
IE = 10µA, IC = 0
5
V
VCB = 5V, IE = –2mA
180 700
IC = 100mA, IB = 10mA
0.6 V
VCE = 1V, IC = 100mA
0.7 1
V
VCB = 5V, IE = –2mA, f = 200MHz
200 MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
110 mV
Rank
RST
hFE
Marking 2SC2405
Symbol 2SC2406
180 ~ 360
SR
TR
260 ~ 520
SS
TS
360 ~ 700
ST
TT
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC2405.PDF ] | |
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