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PDF MBR25H35CT Data sheet ( Hoja de datos )

Número de pieza MBR25H35CT
Descripción (MBR25H35CT - MBR25H60CT) Dual Common-Cathode Schottky Rectifier
Fabricantes Vishay Siliconix 
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New Product
MBR(F,B)25H35CT thru MBR(F,B)25H60CT
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
TO-220AB
ITO-220AB
MBR25HxxCT
PIN 1
PIN 2
PIN 3
CASE
3
2
1
TO-263AB
K
MBRF25HxxCT
123
PIN 1
PIN 3
PIN 2
2
1
MBRB25HxxCT
PIN 1
K
PIN 2
HEATSINK
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
35 V to 60 V
IFSM
150 A
VF 0.54 V, 0.60 V
IR 100 μA
TJ max.
175 °C
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test, HE3 suffix for high reliability grade (AEC-Q101
qualified), meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR25H35CT MBR25H45CT MBR25H50CT MBR25H60CT UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Max. average forward
rectified current (fig. 1)
total device
per diode
VRRM
VRWM
VDC
IF(AV)
35
35
35
45 50
45 50
45 50
30
15
60 V
60 V
60 V
A
Non-repetitive avalanche energy per diode
at 25 °C, IAS = 4 A, L = 10 mH
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
EAS
IFSM
80 mJ
150 A
Peak repetitive reverse surge current per diode
at tp = 2.0 μs, 1 kHz
Peak non-repetitive reverse energy
(8/20 μs waveform)
IRRM
ERSM
1.0
25
0.5 A
20 mJ
Document Number: 88789 For technical questions within your region, please contact one of the following:
Revision: 18-Mar-10
www.vishay.com
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MBR25H35CT pdf
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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