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PDF 2SC2377 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2377 | |
| Descripción | Silicon NPN epitaxial planer type(For high-frequency amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC2377 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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Transistor
2SC2377
Silicon NPN epitaxial planer type
For high-frequency amplification
s Features
q Optimum for RF amplification of FM/AM radios.
q High transition frequency fT.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
30
20
3
15
400
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Transition frequency
Noise figure
Power gain
Common emitter reverse transfer capacitance
ICBO
ICEO
IEBO
hFE*
VBE
fT
NF
PG
Cre
VCB = 10V, IE = 0
100 nA
VCE = 20V, IB = 0
10 µA
VEB = 3V, IC = 0
1 µA
VCB = 6V, IE = –1mA
65 260
VCB = 6V, IE = –1mA
720 mV
VCB = 6V, IE = –1mA, f = 100MHz 450 650
MHz
VCB = 6V, IE = –1mA
3.3 5 dB
VCB = 6V, IE = –1mA
20 24
dB
VCE = 6V, IC = 1mA
0.8 1 pF
*hFE Rank classification
Rank
C
hFE 65 ~ 160
D
100 ~ 260
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC2377.PDF ] | |
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