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Numéro de référence | 2SC2351 | ||
Description | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD | ||
Fabricant | NEC | ||
Logo | |||
1 Page
DATA SHEET
SILICON TRANSISTOR
2SC2351
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
• NF
1.5 dB TYP.
• MAG
14 dB TYP.
@ f = 1.0 GHz
@ f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
VCBO
25
Collector to Emitter Voltage VCEO
12
Emitter to Base Voltage
VEBO
3.0
Collector Current
IC 70
Total Power Dissipation
PT
250
Junction Temperature
Tj
150
Storage Temperature
Tstg −65 to +150
V
V
V
mA
mW
°C
°C
PACKAGE DIMENSIONS
(Units: mm)
2.8±0.2
1.5
0.65
+0.1
−0.15
2
13
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
SYMBOL MIN. TYP.
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE 40
Gain Bandwidth Product
fT
4.5
Output Capacitance
Insertion Power Gain
Cob
S21e2
9
0.75
11
Noise Figure
NF 1.5
Maximum Available Gain
MAG
14
MAX.
0.1
0.1
200
1.0
3.0
UNIT
µA
µA
GHz
pF
dB
dB
dB
TEST CONDITIONS
VCB = 15 V, IE = 0
VEB = 2.0 V, IC = 0
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
VCE = 10 V, IC = 5 mA, f = 1.0 GHz
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
hFE Classification
Class
E/P *
F/Q *
Marking
R2
R3
hFE
40 to 120
100 to 200 * Old Specification / New Specification
Document No. P10350EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
© 1984
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Pages | Pages 4 | ||
Télécharger | [ 2SC2351 ] |
No | Description détaillée | Fabricant |
2SC2351 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD | NEC |
2SC2352 | NPN SILICON TRANSISTOR | NEC |
2SC2358 | SILICON POWER TRANSISTOR | SavantIC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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