PDF LV51139T Data sheet ( Hoja de datos )

Número de pieza	LV51139T
Descripción	2-Cell Lithium-Ion Secondary Battery Protection IC
Fabricantes	Sanyo Semicon Device
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No Preview Available ! www.DataSheet.co.kr Ordering number : ENA1927 CMOS IC LV51139T 2-Cell Lithium-Ion Secondary Battery Protection IC Overview The LV51139T is a protection IC for 2-cell lithium-ion secondary batteries. Features • Monitoring function for each cell: • High detection voltage accuracy: • Hysteresis cancel function: • Discharge current monitoring function: • Low current consumption: • 0V cell charging function: Detects overcharge and over-discharge conditions and controls the charging and discharging operation of each cell. Over-charge detection accuracy ±25mV Over-discharge detection accuracy ±100mV The hysteresis of over-discharge detection voltage is made small by sensing the connection of a load after overcharging has been detected. Detects over-currents, load shorting, and excessively high voltage of a charger . Normal operation mode typ. 6.0μA Stand by mode max. 0.2μA Charging is enabled even when the cell voltage is 0V by giving a potential difference between the VDD pin and V- pin. Absolute Maximum Ratings at Ta = 25°C Parameter Power supply voltage Input voltage Charger minus voltage Output voltage Cout pin voltage Dout pin voltage Allowable power dissipation Operating ambient temperature Storage temperature Symbol VDD V- Vcout Vdout Pd max Topr Tstg Independent IC Conditions Ratings -0.3 to +12 VDD-28 to VDD+0.3 Unit V V VDD-28 to VDD+0.3 VSS-0.3 to VDD+0.3 170 -30 to +85 -40 to +125 V V mW °C °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. 21611 SY 20110204-S00003 No.A1927-1/7 Datasheet pdf - http://www.DataSheet4U.net/ 1 page www.DataSheet.co.kr LV51139T Excessive charger detection/release If the voltage between V- pin and VSS pin becomes equal to or less than the excessive charger detection voltage by connecting a charger, no charging can be made by turning the Cout pin “L” after delay time and turning off the external Nch MOS FET. If that voltage returns to equal to or more than the excessive charger detection voltage during detection delay time, the excessive charger detection will be stopped. If the voltage between V- pin and VSS pin becomes equal to or more than the excessive charger detection voltage after excessive charger detection, the Cout returns to “H” after delay time. The detection/return delay time is set internally. If Dout pin is “L”, charging will be made through the parasitic diode of external Nch FET on Dout pin. In that case, the voltage between V- pin and VSS pin is nearly -Vf which is less than the over-charger detection voltage, therefore no excessive charger detection will be made during over-discharge, over-current and short-circuit detection. Furthermore, if excessive voltage charger is connected to the over-discharged battery, no excessive charger detection is made while the Dout pin is “L”. But the battery is continued charging through the parasitic diode. If the battery voltage rises to the over-discharge detection voltage and the voltage between V- pin and VSS pin remains equal to or less than the excessive charger detection voltage, the delay operation will be started after Dout pin turns to “H”. 0V cell charging operation If voltage between VDD and V becomes equal to or more than the 0V cell charging lowest operation voltage when the cell voltage is 0V, the Cout pin turns to “H” and charging is enabled. Shorten the test time By turning T pin to the VDD, the delay times set by the internal counter can be cut. If T pin is “open”, ”L” the delay times are normal. Delay time not set by the counter just like as short circuit detection delay cannot be controlled by this pin. By the substrate layout, the power-supply voltage is lowered due to an excessive current at the load short. Therefore, we recommend that the T pin is connected to the VSS pin because the problem that this IC enters a standby mode might be caused. Operation in case of detection overlap Overlap state When, during over- charge detection, Over-discharge detection is made, Operation in case of detection overlap Over-charge detection is preferred. If over- discharge state continues even after over- charge detection, over-discharge detection is resumed. State after detection When over-charge detection is made first, V- is released. When over-discharge is detected after over-charge detection, the standby state is not effectuated. Note that V- is connected to VDD via 200kΩ. Over-current (1) Both detections’ can be made in parallel. (2) When over-current is detected first, V- is detection is made, Over-charge detection continues even when the connected to VSS via 10kΩ. When over-charge over-current state occurs. If the over-charge detection is made first, V- is released. state occurs first, over-current detection is interrupted. During over-discharge Over-charge detection Over-discharge detection is interrupted and The standby state is not effectuated when over- detection, is made, over-charge detection is preferred. When over- discharge state continues even after over- charge detection, over-discharge detection is discharge detection is made after over-charge detection. Note that V- is connected to VDD via 200kΩ. resumed. Over-current (3) Both detections can be made in parallel. (4) If over-current state is made first, V- will be detection is made, Over-discharge detection continues even when the over-current state is effectuated first. Over- connected to VSS via 10kΩ. If over-discharge detection is made next, V- will be disconnected current detection is interrupted when the over- discharge state is effectuated first, from VSS and connected to VDD via 200kΩ to get into stand-by mode. If over-discharge state When, during over- Over-charge detection (1) current detection, is made, Over-discharge (3) detection is made, (Note) Short-circuit detection can be made independently. is made first, V- will be connected to VDD via 200kΩ to get into stand-by mode. (2) (4) Excessive charger detection cannot be made during over-discharge, over-current and short-circuit detection. And its delay time starts after the Dout pin returns to “H”. No.A1927-5/7 Datasheet pdf - http://www.DataSheet4U.net/ 5 Page

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