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GB150TS60NPBF fiches techniques PDF

Vishay Siliconix - Ultrafast Speed IGBT

Numéro de référence GB150TS60NPBF
Description Ultrafast Speed IGBT
Fabricant Vishay Siliconix 
Logo Vishay Siliconix 





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GB150TS60NPBF fiche technique
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GB150TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 138 A
INT-A-PAK
PRODUCT SUMMARY
VCES
IC DC
VCE(on) at 150 A, 25 °C
600 V
138 A
2.64 V
FEATURES
• Generation 5 Non Punch Through (NPT)
technology
• Ultrafast: Optimized for hard switching speed
8 kHz to 60 kHz
• Low VCE(on)
• 10 μs short circuit capability
• Square RBSOA
• Positive VCE(on) temperature coefficient
• HEXFRED® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al2O3 DBC
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed for industrial level
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Gate to emitter voltage
VGE
Maximum power dissipation
PD
Isolation voltage
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 min
MAX.
600
138
93
300
300
178
121
± 20
500
280
2500
UNITS
V
A
V
W
V
Document Number: 94502
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
1
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