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Número de pieza | VEC2904 | |
Descripción | P-Channel Silicon MOSFET | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
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Ordering number : ENA1158
VEC2904
SANYO Semiconductors
DATA SHEET
VEC2904
PNP Epitaxial Planar Silicon Transistor
P-Channel Silicon MOSFET
General-Purpose Switching Device
Features
Applications
• Composite type, facilitating high-density mounting.
• Mounting height 0.75mm.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Collector Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
[FET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Marking : AH
Symbol
VCBO
VCEO
VECO
VEBO
IC
ICP
IB
PC
Tj
Tstg
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
Ratings
--30
--30
--6.5
--5
--3
--5
--600
1.1
150
--55 to +150
--12
±8
--4
--16
1.1
150
--55 to +150
Unit
V
V
V
V
A
A
mA
W
°C
°C
V
V
A
A
W
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40908PE TI IM TC-00001144 No. A1158-1/6
Datasheet pdf - http://www.DataSheet4U.net/
1 page www.DataSheet.co.kr
RDS(on) -- VGS
150
--1.0A
125
ID= --0.3A --2.0A
100
VEC2904
[FET]
Ta=25°C
150
125
100
75 75
50 50
25 25
RDS(on) -- Ta
[FET]
VVVGGGSSS===-----12-.4.85.V5V,V, I,IDDID===----0-1-..320A.A0A
0
0 --1 --2 --3 --4 --5
Gate-to-Source Voltage, VGS -- V
⏐yfs⏐ -- ID
10
7 VDS= --6V
--6
IT09405
[FET]
5
3
2
Ta=
--25°C
75°C
1.0
7
25°C
5
3
2
0.1
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0
5
VDD= --6V
Drain Current, ID -- A
SW Time -- ID
3 VGS= --4.5V
23
5 7 --10
IT09407
[FET]
2
td(off)
100
tf
7
5 tr
3
2
td(on)
10
7
--0.1
23
5 7 --1.0
23
57
--4.5
VDS= --6V
--4.0 ID= --4A
Drain Current, ID -- A
VGS -- Qg
IT09409
[FET]
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0 1 2 3 4 5 6 7 8 9 10 11
Total Gate Charge, Qg -- nC
IT09411
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT09406
IS -- VSD
[FET]
--10
7 VGS=0V
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
--0.3
3
2
--0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1
Diode Forward Voltage, VSD -- V IT09408
Ciss, Coss, Crss -- VDS [FET]
f=1MHz
1000
7
5
3
2
Ciss
Coss
Crss
100
0
--2 --4 --6
--8 --10 --12
Drain-to-Source Voltage, VDS -- V IT09410
ASO
[FET]
3
2 IDP= --16A
PW≤10μs
--10
7
5
ID= --4A
3
2
--1.0
7
5
1ms
DC
100m1s0ms
operation
3
2 Operation in this
area is limited by RDS(on).
--0.1
7
5
3 Ta=25°C
2 Single pulse
--0.01 When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10
23
Drain-to-Source Voltage, VDS -- V IT13483
No. A1158-5/6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet VEC2904.PDF ] |
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