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PDF VEC2815 Data sheet ( Hoja de datos )
| Número de pieza | VEC2815 | |
| Descripción | P-Channel Silicon MOSFET / Schottky Barrier Diode | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de VEC2815 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Ordering number : ENA0559
VEC2815
SANYO Semiconductors
DATA SHEET
VEC2815
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
• DC/DC converter.
• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
facilitating high-density mounting.
• [MOSFET]
• Low ON-resistance.
• 4V drive.
• [SBD]
• Short reverse recovery time.
• Low forward voltage.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : CL
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
50Hz sine wave, 1 cycle
Ratings
Unit
--30
±20
--3
--12
0.9
150
--55 to +125
V
V
A
A
W
°C
°C
30
30
3
20
--55 to +125
--55 to +125
V
V
A
A
°C
°C
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2906PE TI IM TC-00000344 No.A0559-1/6
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
VEC2815
IF -- VF
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
0.1
1.8
Rectangular
wave
1.6
0.2 0.3 0.4
Forward Voltage, VF -- V
PF(AV) -- IO
(1)
0.5 0.6
IT09872
(2) (4) (3)
1.4 θ
360°
1.2 Sine wave
1.0
180°
0.8 360°
0.6
0.4 (1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
0.2 (3)Rectangular wave θ=180°
0 (4)Sine wave θ=180°
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Average Output Current, IO -- A IT09874
Tc -- IO
140
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
120 (3)Rectangular wave θ=180°
(4)Sine wave θ=180°
100
80 *When mounted in reliability
operaion board,
Rth(J-a)=50°C/W
60
Rectangular
wave
40 θ
360°
Sine
20 wave
180°
(1) (2) (4) (3)
0 360°
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Average Output Current, IO -- A IT10608
C -- VR
7
5
1000k
IR -- VR
100k Ta=125°C
100°C
10k 75°C
50°C
1k
25°C
100
0°C
10 --25°C
1.0
0.1
0
5 10 15 20 25
Reverse Voltage, VR -- V
PR(AV) -- VR
0.016
(1)Rectangular wave θ=300°
0.014 (2)Rectangular wave θ=240°
(3)Rectangular wave θ=180°
0.012 (4)Sine wave θ=180°
0.010
0.008
0.006
360°
Rectangular θ
wave
VR
Sine wave
180°
VR
360°
0.004
30 35
IT09873
(1)
(2)
(3)
(4)
0.002
0
0 5 10 15 20 25 30 35
Average Reverse Voltage, VR -- V IT10607
IFSM -- t
24
Current waveform 50Hz sine wave
20 IS
20ms
16 t
12
8
4
0
7 0.01
23
5 7 0.1
23
Time, t -- s
5 7 1.0
23
ID00523
3
2
100
7
5
3
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5
Reverse Voltage, VR -- V
IT09871
No.A0559-5/6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet VEC2815.PDF ] | |
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