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PDF VEC2616 Data sheet ( Hoja de datos )
| Número de pieza | VEC2616 | |
| Descripción | N-Channel and P-Channel Silicon MOSFETs | |
| Fabricantes | Sanyo Semicon Device | |
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Ordering number : ENA1822
VEC2616
SANYO Semiconductors
DATA SHEET
VEC2616
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
• ON-resistance Nch: RDS(on)1=62mΩ(typ.), Pch: RDS(on)1=105mΩ(typ.)
• 4V drive
• N-channel MOSFET + P-channel MOSFET
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
When mounted on ceramic substrate (900mm2×0.8mm)
N-channel P-channel
60 --60
±20 ±20
3 --2.5
12 --10
0.9
1.0
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Package Dimensions
unit : mm (typ)
7012-002
8 7 65
0.3
0.15
Product & Package Information
• Package
: VEC8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
1234
0.65
2.9
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : VEC8
UP
Lot No.
TL
Electrical Connection
87 6 5
1234
http://semicon.sanyo.com/en/network
91510PE TK IM TC-00002461 No. A1822-1/6
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
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VEC2616
RDS(on) -- VGS
300
250 ID= --1.5A
--0.75A
200
150
100
50
[Pch]
Ta=25°C
RDS(on) -- Ta
[Pch]
300
250
200
150
100
V GVVSG=GSS-=-=4-.--04-1V.50,V.I0,DVI=,DI-=-D0-=.-705-.-7A15.5AA
50
0
0 --2 --4 --6 --8 --10 --12 --14 --16
2
Gate-to-Source
| yfs
V| ol-t-ageID, VGS
--
V
IT15913
[Pch]
VDS= --10V
10
7
5
3
2
1.0
Ta= --25°C
75°C
25°C
7
5
3
2
0.1
--0.01
2
100
7
5
3
2
23
5 7 --0.1 2 3 5 7 --1.0
Drain
SW
Current,
Time
I-D-
-- A
ID
2 3 57
IT15915
[Pch]
td(off)
VDD= --30V
VGS= --10V
tf
0
--60 --40 --20 0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT15914
7
IS -- VSD
[Pch]
5 VGS=0V
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
--0.2
2
--0.4
--0.6
--0.8
--1.0
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-DV--DVS
--1.2
IT15916
[Pch]
f=1MHz
1000
7
5
3
2
Ciss
10
7
td(on)
tr
5
3
2
--0.1
23
5 7 --1.0
2
Drain Current,
VGS --
IQDg--
A
--10
VDS= --30V
--9 ID= --2.5A
--8
3
--7
--6
--5
--4
--3
--2
--1
0
0123456789
Total Gate Charge, Qg -- nC
57
IT15917
[Pch]
10 11
IT15919
100
7
5 Coss
3 Crss
2
0 --5 --10 --15 --20 --25 --30 --35 --40 --45 --50 --55 --60
Drain-to-Source
A
Voltage,
SO
VDS
--
V
IT15918
[Pch]
2
--10 IDP= --10A (PW≤10μs)
7
5
3 ID= --2.5A
2
--1.0
7
100m1s0ms
100μs
5
3
2 Operation in this area
--0.1
7
is limited by RDS(on).
5 Ta=25°C
3 Single pulse
2 When mounted on ceramic substrate
--0.01 (900mm2×0.8mm) 1unit
--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 2 3 5 7--100
Drain-to-Source Voltage, VDS -- V IT15920
No. A1822-5/6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet VEC2616.PDF ] | |
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