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TIG111GMH fiches techniques PDF

Sanyo Semicon Device - N-Channel Non Punch Through IGBT

Numéro de référence TIG111GMH
Description N-Channel Non Punch Through IGBT
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





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TIG111GMH fiche technique
www.DataSheet.co.kr
Ordering number : EN9014
TIG111GMH
SANYO Semiconductors
DATA SHEET
TIG111GMH
N-Channel Non Punch Through IGBT
High Power High Speed Switching
Applications
Features
Low-saturation voltage
Ultrahigh speed switching
Enhansment type
Specications
Absolute Maximum Ratings at Ta=25°C, Unless otherwise specied
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
Collector Current (DC)
Collector Current (Pulse)
Allowable Power Dissipation
Junction Temperature
Storage Temperature
VCES
VGES
IC*1
IC*2
ICP
PD
Tj
Tstg
Limited by Tjmax
Limited by Tjmax
@Tc=25°C*3
@Tc=100°C*3
Pulse width Limited by Tjmax
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
600
±30
32
21
10
128
3
55
150
-55 to +150
V
V
A
A
A
A
W
W
°C
°C
Note :*1 Shows chip capability
*2 Collector current is calculated from the following for mula
IC(TC)=
Tjmax - TC
Rth(j-c)×VCE(sat)max.(Tjmax, IC(TC))
*3 SANYO’s condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
Package Dimensions
unit : mm (typ)
7504-003
16.0 3.4 5.6
3.1
Product & Package Information
• Package
: TO-3PMLH
• JEITA, JEDEC
: SC-93, TO-247, SOT-199
• Minimum Packing Quantity : 100 pcs./tray
Marking
Electrical Connection
2
2.8
2.0
0.7
123
5.45
5.45
2.1
0.9
1 : Gate
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
TIG111
LOT No.
1
3
http://semicon.sanyo.com/en/network
92811QJ TKIM TC-00002634 No.9014-1/5
Datasheet pdf - http://www.DataSheet4U.net/

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