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TF202B fiches techniques PDF

Sanyo Semicon Device - N-channel Silicon Junction FET

Numéro de référence TF202B
Description N-channel Silicon Junction FET
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





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TF202B fiche technique
www.DataSheet.co.kr
Ordering number : ENA0201
TF202B
TF202B N-channel Silicon Junction FET
Condenser Microphone Applications
Features
Especially suited for use in condenser microphone for audio equipments and telephones.
TF202B is possible to make applied sets smaller and thinner
Excellent voltage characteristic.
Excellent transient characteristic.
Adoption of FBET process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VGDO
IG
ID
PD
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
V(BR)GDO IG=--100µA
Cutoff Voltage
VGS(off) VDS=5V, ID=1µA
Zero-Gate Voltage Drain Current
IDSS
VDS=5V, VGS=0V
Forward Transfer Admittance
yfs
VDS=5V, VGS=0V, f=1kHz
Input Capacitance
Ciss
VDS=5V, VGS=0V, f=1MHz
Reverse Transfer Capacitance
Crss
VDS=5V, VGS=0V, f=1MHz
[Ta=25˚C, VCC=4.5V, RL=1k, Cin=15pF, See specified Test Circuit.]
Voltage Gain
GV VIN=10mV, f=1kHz
Reduced Voltage Characteristics
GVV
VIN=10mV, f=1kHz, VCC=4.51.5V
* : The TF202B is classified by IDSS as follows : (unit : µA)
Rank
E4
E5
IDSS
140 to 240
210 to 350
Marking : E
Ratings
--20
10
1
100
150
--55 to +150
Unit
V
mA
mA
mW
°C
°C
min
--20
--0.2
140*
0.5
Ratings
typ
--0.6
1.2
3.5
0.65
max
--1.2
350*
Unit
V
V
µA
mS
pF
pF
--3.0 dB
--1.2 --3.5 dB
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2805GB MS IM TB-00001895 No. A0201-1/4
Datasheet pdf - http://www.DataSheet4U.net/

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