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PDF HFA80NC40CSM Data sheet ( Hoja de datos )
| Número de pieza | HFA80NC40CSM | |
| Descripción | Soft Recovery Diode | |
| Fabricantes | International Rectifier | |
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PD -2.471 rev. B 01/99
HEXFREDTM
HFA80NC40CSM
Ultrafast, Soft Recovery Diode
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of
Recovery Parameters
VR = 400V
VF(typ.) = 1V
IF(AV) = 80A
Qrr (typ.) = 200nC
IRRM(typ.) = 6A
trr(typ.) = 30ns
di(rec)M/dt (typ.) = 190A/µs
Description
HEXFREDTM diodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are ideally
suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
SMD-61-8
Absolute Maximum Ratings (per Leg)
VR
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
EAS
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current
Non-Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
400
85
42
300
1.4
150
59
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
mJ
W
°C
Thermal - Mechanical Characteristics
RthJC
Wt
Parameter
Junction-to-Case, Single Leg Conducting
Junction-to-Case, Both Legs Conducting
Weight
Min.
––––
––––
––––
Typ.
––––
––––
4.3 (0.15)
Max.
0.85
0.42
––––
Units
°C/W
K/W
g (oz)
Note: Limited by junction temperature
L = 100µH, duty cycle limited by max TJ
125°C
1
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HFA80NC40CSM
PD-2.471 rev. B 01/99
REVERSE RECOVERY CIRCUIT
VR = 200V
L = 70µH
0.01 Ω
D .U .T.
dif/dt
ADJUST G
D
IRFP250
S
IF
0
3
trr
ta
tb
2
I RRM
4
Q rr
0.5 I RRM
di(rec)M /dt
5
0.75 IRRM
1 dif /dt
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by trr
and IRRM
trr X IRRM
Qrr =
2
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Parameter Test
Circuit
Fig. 10 - Reverse Recovery Waveform and
Definitions
DUT
CURRENT
M O N IT O R
L = 100µH
Rg = 25 ohm
H IG H -S P E E D
SW ITCH
FREE-W HEEL
DIO DE
+
Vd = 50V
I L(PK)
V (AVAL)
V R(RATED)
DECAY
TIM E
Fig. 11 - Avalanche Test Circuit and Waveforms
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.
IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.
IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.
http://www.irf.com
Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
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