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PDF 2SC2073A Data sheet ( Hoja de datos )
| Número de pieza | 2SC2073A | |
| Descripción | Silicon NPN Triple Diffused Type TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SC2073A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC2073A
Power Amplifier Applications
Vertical Output Applications
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO 150 V
Collector-emitter voltage
VCEO 150 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 1.5 A
Base current
IB 0.5 A
Collector power
dissipation
Junction temperature
Ta = 25°C
Tc = 25°C
PC
Tj
2.0
W
25
150 °C
1.Base
2.Collector
3.Emitter
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
―
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
TOSHIBA
SC-67
2-10R1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 1.7 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
http://store.iiic.cc/
2010-11-26
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC2073A.PDF ] | |
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