PDF LV5124T Data sheet ( Hoja de datos )

Número de pieza	LV5124T
Descripción	2-Cell Lithium-Ion Secondary Battery Protection IC
Fabricantes	Sanyo Semicon Device
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No Preview Available ! www.DataSheet.co.kr Ordering number : ENA1153 LV5124T CMOS IC 2-Cell Lithium-Ion Secondary Battery Protection IC Overview The LV5124T is a protection IC for 2-cell lithium-ion secondary batteries. Features • Monitoring function for each cell: Detects overcharge and over-discharge conditions and controls the charging and discharging operation of each cell. • High detection voltage accuracy: Over-charge detection accuracy ±25mV Over-discharge detection accuracy ±100mV • Hysteresis cancel function: The hysteresis of over-discharge detection voltage is made small by sensing the connection of a load after overcharging has been detected. • Discharge current monitoring function: Detects over-currents and load shorting, and an excessive discharge current is controlled. • Latch function after detecting over-current (Release is made by connecting the charger) • Low current consumption: Normal operation mode typ. 6.0µA Stand by mode max. 0.2µA • 0V cell charging function: Charging is enabled even when the cell voltage is 0V by giving a potential difference between the VDD pin and V- pin. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. 52808 MS 20080312-S00003 No.A1153-1/8 Datasheet pdf - http://www.DataSheet4U.net/ 1 page www.DataSheet.co.kr LV5124T Functional Description Over-charge detection If either of the cell voltage is equal to or more than the over-charge detection voltage, stop further charging by turning “L” the Cout pin and turning off external Nch MOS FET after the over-charge detection delay time. This delay time is set by the internal counter. The over-charge detection comparator has the hysteresis function. Note that this hysteresis can be cancelled by connecting the load after detection of over-charge detection. and it becomes small to hysteresis peculiar to a comparator. Once over-charge detection is made, over-current detection is not made to prevent incorrect operations. Note that short-circuit can be detected. Over-charge release If both cell voltages become equal to or less than the over-charge release voltage (VM ≤ Vd3) when charger is connected, or if it become equal to or less than the over-charge release voltage (VM > Vd3) when load is connected, the Cout pin returns to “H” after the over-charge release delay time set by the internal counter. When load is connected and either cell or both cell voltages are equal to or more than the over-charge release voltage (VM > Vd3), the Cout pin does not return to “H”. But the load current flows through the parasitic diode of external Nch MOS FET on Cout, consequently each cell voltage becomes equal to or less than over-charge release voltage (VM > Vd3), the Cout pin returns to “H” after the over-charge release delay time. Over-discharge detection When either cell voltage is equal to or less than over-discharge voltage, the IC stops further discharging by turning the Dout pin “L” and turning off external Nch MOS FET after the over-charge detection delay time. The IC goes into stand-by mode after detecting over-discharge and its consumption current is kept at about 0A. After over-discharge detection, the V- pin will be connected to VDD pin via internal resistor (typ 200kΩ). Over-discharge release Release from over-discharge is made by only connecting charger. If the V- pin voltage becomes equal to or lower than the stand-by release voltage by connecting charger after detecting over-discharge, The IC is released from the stand-by state to start cell voltage monitoring. If both cell voltages become equal to or more than the over-discharge detection voltage by charging, the Dout pin returns to “H” after the over-discharge release delay time set by the internal counter. Over-current detection When excessive current flows through the battery, the V- pin voltage rises by the ON resister of external MOS FET and becomes equal to or more than the over-current detection voltage, the Dout pin turns to “L” after the over-current detection delay time and the external Nch MOS FET is turned off to prevent excessive current in the circuit. The detection delay time is set by the internal counter. After detection, the V- pin will be connected to VSS via internal resistor (typ 1MΩ). It will not go into stand-by mode after detecting over-current. Short circuit detection If greater discharging current flows through the battery and the V- pin voltage becomes equal to or more than the short-circuit detection voltage, it will go into short-circuit detection state after the short circuit delay time shorter than the over-current detection delay time. When short-circuit is detected, just like the time of over-current detection, the Dout pin turns to “L” and external Nch MOS FET is turned off to prevent high current in the circuit. The V- pin will be connected to VSS after detection via internal resistor (typ 1MΩ). It will not go into stand-by mode after detecting short circuit. Over-current/short-detection release After detecting over-current or short circuit, the internal resistor (typ.1MΩ) between V- pin and VSS pin becomes effective. In this case, the V-pin voltage will be more than over-current detection voltage because of the relation between internal resister and the internal impedance of V- pin. Therefore, if the load resister is removed after detecting over-current or short circuit, the detection state will be kept. Release from over-current or short circuit is only made by connecting a charger to make the V- pins lower than over-current detection voltage and the Dout pin returns to “H after over-current release delay time set by the internal counter. No.A1153-5/8 Datasheet pdf - http://www.DataSheet4U.net/ 5 Page

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