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PDF LV51144T Data sheet ( Hoja de datos )
| Número de pieza | LV51144T | |
| Descripción | 1-Cell Lithium-Ion Battery Protection IC | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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www.DataSheet.co.kr
Ordering number : ENA1642
LV51144T
CMOS IC
1-Cell Lithium-Ion Battery
Protection IC
Overview
The LV51144T is protection IC for rechargeable Li-ion battery by high withstand voltage CMOS process.
The LV51144T protect single-cell Li-ion battery from over-charge, over-discharge, charge over-current and discharge
over-current.
Features
• High accuracy detection voltage
Over-charge detection(no hysteresis)
±25mV
Over-discharge detection(no hysteresis)
±25%
Charge over-current detection
±30mV
Discharge over-current detection
±20mV
• Delay time (internal adjustment)
• Low current consumption
Operation
Typ. 3.0μA
Over-discharge condition
Max. 0.1μA
• 0V cell battery charging function
• The over-discharge detection is released only when the charger is connected.
Specifications
Absolute Maximum Ratings
Parameter
Supply voltage
Input voltage of VM
Output voltage of CO
Output voltage of DO
Power dissipation
Operating temperature
Storage temperature
Symbol
VDD
VM
VCO
VDO
PD
Topr
Tstg
Conditions
Ratings
VSS-0.3 to VSS+7
VDD-28 to VDD+0.3
VM-0.3 to VDD+0.3
VSS-0.3 to VDD+0.3
350
-40 to +85
-55 to +125
Unit
V
V
V
V
mW
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
D2409 SY 20091221-S00005 No.A1642-1/13
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
LV51144T
Continued from preceding page.
• Current consumption on operation and shutdown --- [Circuit 4]
Set V1 = 3.5V and V2 = 0V on normal condition. IDD shows current consumption on operation Iopr.
Set V1 = V2 = 1.8V on over-discharge condition. IDD shows current consumption on shutdown Isdn.
• Co : Pch ON resistance, Co : Nch ON resistance --- [Circuit 5]
Set V1 = 3.5V, V2 = 0V and V3 = 3.0V. (V1-V3)/|ICo| is Pch ON resistance Rcop.
Set V1 = 4.6V, V2 = 0V and V3 = 0.5V. V3/|ICo| is Nch ON resistance Rcon.
• Do : Pch ON resistance, Do : Nch ON resistance --- [Circuit 5]
Set V1 = 3.5V, V2 = 0V and V4 = 3.0V. (V1-V4)/|IDo| is Pch ON resistance Rdop.
Set V1 = V2 = 1.8V and V4 = 0.5V. V4/|IDo| is Nch ON resistance Rdon.
• Discharge over-current release resistance --- [Circuit 5]
Set V1 = 3.5V, V2 = 0V at first. And then, set V2 = 1.0V. V2/|IVM| is discharge over-current release resistance Rdwn.
• Over-charge detection delay time, Release delay time 2 --- [Circuit 6]
Set V2 = 0V. Increase V1 from the voltage VC-0.2V to VC+0.2V rapidly within 10μs. Over-charge detection delay time
tc is the time needed for VCO to go "Low" just after the change of V1.
Next, set V2 = 1V and decrease V1 from VC+0.2V to VC-0.2V rapidly within 10μs. Over-charge release delay time trel
2 is the time needed for VCO to go "High" just after the change of V1.
• Over-discharge detection delay time, Release delay time 1 --- [Circuit 6]
Set V2 = 0V. Decrease V1 from the voltage Vdc+0.2V to Vdc-0.2V rapidly within 10μs. Over-discharge detection
delay time tdc is the time needed for VDO to go "Low" just after the change of V1.
Next, set V2 = -1V and increase V1 from Vdc-0.2V to Vdc+0.2V rapidly within 10μs. Release delay time 1 trel1 in case
of over-discharge is the time needed for VDO to go "High" just after the change of V1.
• Charge over-current detection delay time, Release delay time 1 --- [Circuit 6]
Set V1 = 3.0V and V2 = 0V. Decrease V2 from 0V to -1V rapidly within 10μs. Charge over-current delay time tic is the
time needed for VCO to go "Low" just after the change of V2.
Next, increase V2 from -1V to 0V rapidly within 10μs. Release delay time 1 trel1 in case of charge over-current is the
time needed for VCO to go "High" just after the change of V2.
• Discharge over-current detection delay time, Release delay time 1 --- [Circuit 6]
Set V1 = 3.0V and V2 = 0V. Increase V2 from 0V to 1V rapidly within 10μs. Discharge over-current delay time tidc is
the time needed for VDO to go "Low" just after the change of V2.
Next, decrease V2 from 1V to 0V rapidly within 10μs. Release delay time 1 trel1 in case of discharge over-current is the
time needed for VDO to go "High" just after the change of V2.
• Load short-circuiting detection delay time, Release delay time 1 --- [Circuit 6]
Set V1 = 3.0V and V2 = 0V. Increase V2 from 0V to 3.0V rapidly within 10μs. Load short-circuiting detection delay
time tshort is the time needed for VDO to go "Low" just after the change of V2.
Next, decrease V2 from 3.0V to 0V rapidly within 10μs. Release delay time 1 trel1 in case of load short-circuiting is the
time needed for VDO to go "High" just after the change of V2.
No.A1642-5/13
Datasheet pdf - http://www.DataSheet4U.net/
5 Page 
www.DataSheet.co.kr
• Over-charge detection
Charger connected
VC
VDD
Vdc
LV51144T
Charger connected
Load connected
VM VIdc
VSS
VDD
DO
VSS
VDD
CO
VSS
VM
tc tc
trel2 trel2
VC : Over-charge detection voltage
Vdc : Over-discharge detection voltage
Vidc : Discharge over-current detection voltage
tc : Over-charge detection delay time
trel2 : Release delay time 2
No.A1642-11/13
Datasheet pdf - http://www.DataSheet4U.net/
11 Page | ||
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